Browsing by Subject "Quantum efficiency"

Now showing 1 - 20 of 23

Open Access
1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
(IEEE, Piscataway, NJ, United States, 2000) Necmi, B.; Kimukin, I.; Özbay, Ekmel; Tuttle, G.
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
Open Access
45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
(IEEE, 2001) Bıyıklı, Necmi; Kimukin, I.; Aytür, O.; Gökkavas, M.; Ünlü, M. S.; Özbay, Ekmel
High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.
Open Access
Comparative study of thin film n-i-p a-Si: H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles
(Elsevier Ltd, 2015) Islam, K.; Chowdhury F.I.; Okyay, Ali Kemal; Nayfeh, A.
In this paper, the effect of gold nanoparticles on n-i-p a-Si:H solar cells with different intrinsic layer (i-layer) thicknesses has been studied. 100nm and 500nm i-layer based n-i-p a-Si:H solar cells were fabricated and colloidal gold (Au) nanoparticles dispersed in water-based solution were spin-coated on the top surface of the solar cells. The Au nanoparticles are of spherical shape and have 100nm diameter. Electrical and quantum efficiency measurements were carried out and the results show an increase in short-circuit current density (Jsc), efficiency and external quantum efficiency (EQE) with the incorporation of the nanoparticles on both cells. Jsc increases from 5.91mA/cm2 to 6.5mA/cm2 (~10% relative increase) and efficiency increases from 3.38% to 3.97% (~17.5% relative increase) for the 100nm i-layer solar cell after plasmonic enhancement whereas Jsc increases from 9.34mA/cm2 to 10.1mA/cm2 (~7.5% relative increase) and efficiency increases from 4.27% to 4.99% (~16.9% relative increase) for the 500nm i-layer cell. The results show that plasmonic enhancement is more effective in 100nm than 500nm i-layer thickness for a-Si:H solar cells. Moreover, the results are discussed in terms of light absorption and electron hole pair generation. © 2015 Elsevier Ltd.
Open Access
Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers
(Institute of Physics Publishing, 2018) Arslan, Seval; Demir, Abdullah; Şahin, S.; Aydınlı, A.
In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO2 and Si x O2/SrF2 (versus SrF2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O2 layer compensates for the large thermal expansion coefficient mismatch of SrF2 with the semiconductor and mitigates the detrimental effects of SrF2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.
Open Access
Design, fabrication and characterization of high performance resonant cavity enhanced photodetectors
(1998) Bıyıklı, Necmi
Photodetectors are essential components of optoelectronic integrated circuits and fiber optic communication systems. For higher system performances, photoreceivers with high bandwidth-efficiency products are needed. A new family of photodetectors introduced in the early 90's offers high performance detection along with wavelength selectivity: resonant cavity enhanced (RCE) photodetectors. In this thesis, we present our efforts for the design, fabrication and characterization of AlGaAs/GaAs-based Schottky and p-i-n type RCE photodiodes operating within the first optical communication window. Epitaxial wafers are designed using scattering matrix method based simulations and grown with molecular beam epitaxy. Schottky photodiode was primarily designed for high-speed operation, where as in p-i-n structure we aim to achieve near unity quantum efficiency. Measurement results show reasonable agreement our theoretical simulations. Fabricated Schottky and p-i-n RCE photodiode samples demonstrated high bandwidth-efficiency products, 36 and 46 GHz respectively. These results indicate the best performances for RCE Schottky and p-i-n photodiodes reported in scientific literature.
Open Access
Electroluminescence efficiency enhancement in quantum dot light-emitting diodes by embedding a silver nanoisland layer
(Wiley-VCH Verlag, 2015) Yang, X.; Hernandez-Martinez, P. L.; Dang C.; Mutlugün, E.; Zhang, K.; Demir, Hilmi Volkan; Sun X. W.
A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced electroluminescence by embedding a thin layer of Ag nanoislands into hole transport layer. The maximum external quantum efficiency (EQE) of 7.1% achieved in the present work is the highest efficiency value reported for green-emitting QLEDs with a similar structure, which corresponds to 46% enhancement compared with the reference device. The relevant mechanisms enabling the EQE enhancement are associated with the near-field enhancement via an effective coupling between excitons of the quantum dot emitters and localized surface plasmons around Ag nano-islands, which are found to lead to good agreement between the simulation results and the experimental data, providing us with a useful insight important for plasmonic QLEDs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Open Access
High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
(SPIE, 2013) Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, Atilla
We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6×10-3 A/cm2 and 148 ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings. © 2013 SPIE.
Open Access
High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths
(American Institute of Physics Inc., 2017) Emani, N. K.; Khaidarov, E.; Paniagua-Domínguez, R.; Fu, Y. H.; Valuckas, V.; Lu S.; Zhang X.; Tan S.T.; Demir, Hilmi Volkan; Kuznetsov, A. I.
The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.
Open Access
High-performance 1.55 μm resonant cavity enhanced photodetector
(IEEE, 2002) Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel
A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrated. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth with the device. The photoresponse was found to be linear upto 6 mW optical power, where the device 5 mA photocurrent.
Open Access
High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector
(IEEE, 2000) Kimukin, İbrahim; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Tuttle, G.
Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonator. The increased field allows the use of a thin absorbing layer, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. Recently, we fabricated high-speed RCE p-i-n and Schottky photodetectors, where a 90% quantum efficiency along with a 3-dB bandwidth of 50 GHz has been reported. We used the transfer matrix method to design the epilayer structure and to simulate the optical properties of the photodiode. The samples were fabricated by a microwave-compatible process and high-speed measurements were made with an optical parametric oscillator.
Open Access
High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes
(IEEE, 2001) Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel
High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the photodiodes was measured under high incident optical powers. Bandwidth-efficiency (BWE) product was used to measure the performance of the photodiode. Transfer matrix method was used to design the epilayer structure and to simulate the optical properties of the photodiode. Photo response measurements were carried out in 1450 nm to 1700 nm range using a tungsten-halogen projection lamp as the light source and a single pass monochromator. The deconvolved Fourier transform of the data was found to have a bandwidth of 31 GHz under conditions of 40 GHz limit.
Open Access
High-speed resonant-cavity-enhanced Schottky photodiodes
(IEEE, 1998) Ata, Erhan P.; Bıyıklı, Necmi; Demirel, Ekrem; Özbay, Ekmel; Gökkavas, M.; Onat, B.; Ünlü, M. S.; Tuttle, G.
The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method.
Open Access
High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts
(American Institute of Physics, 2003) Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Aytur, O.; Özbay, Ekmel
AlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured. True solar-blind detection was also ensured.
Open Access
High-speed visible-blind GaN-based ITO-Schottky photodiodes
(SPIE, 2002) Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel
In this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a transparent conducting material for the visible and near infrared part of the electromagnetic spectrum. We have investigated the optical properties of thin ITO films in the ultraviolet spectrum The transmission and reflection measurements showed that thin ITO films had better transparencies than thin Au films for wavelengths greater than 280 mn. Using a microwave compatible fabrication process, we have fabricated Au and ITO based Schottky photediodes on n-/n+ GaN epitaxial layers. We have made current-voltage (I-V), spectral quantum efficiency, and high-speed characterization of the fabricated devices. I-V characterization showed us that the Au-Schottky samples had better electrical characteristics mainly due to the larger Schottky barrier. However, due to the better optical transparency, ITO-Schottky devices exhibited higher quantum efficiencies compared to Au-Schottky devices. ITO-Schottky photodiodes with ∼80 nm thick ITO films resulted in a maximum quantum efficiency of 47%, whereas Au-Schottky photodiode samples with ∼10 nm thick Au films displayed a maximum efficiency of 27% in the visible-blind spectrum. UV/visible rejection ratios over three orders of magnitude were obtained for both samples. High-frequency characterization of the devices was performed via pulse-response measurements at 360 nm. ITO-Schottky photodiodes showed excellent high-speed characteristics with rise times as small as 12 psec and RC-time constant limited pulse-widths of 60 psec.
Open Access
High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
(IEEE, 1998) Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, Ekmel
Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.
Open Access
Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
(IEEE, 2014) Yang, X.; Dev, K.; Wang, J.; Mutlugün, E.; Dang, C.; Zhao, Y.; Tan, S. T.; Sun, X. W.; Demir, Hilmi Volkan
We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs with a similar device structure.
Open Access
Low-loss regrowth-free long wavelength quantum cascade lasers
(Institute of Electrical and Electronics Engineers, 2018-12-01) Gündoğdu, Sinan; Demir, Abdullah; Pisheh, Hadi Sedaghat; Aydınlı, Atilla
Optical power output is the most sought-after quantity in laser engineering. This is also true for quantum cascade lasers operating especially at long wavelengths. Buried heterostructure cascade lasers with epitaxial regrowth have typically shown the lowest loss due to high current confinement as well as superior lateral thermal conductivity at the expense of complexity and cost. Among the many factors affecting optical output are the widely used passivating materials such as Si3N4 and SiO2. These materials have substantial optical absorption in the long wavelength infrared, which results in optical loss reducing the output of the laser. In this letter, we report on quantum cascade lasers with various waveguide widths and cavity lengths using both PECVD grown Si3N4 and e-beam evaporated HfO2 as passivating material on the same structure. Their slope efficiency was measured, and the cavity losses for the two lasers were calculated. We show that HfO2 passivated lasers have approximately 5.5 cm-1 lower cavity loss compared to Si3N4 passivated lasers. We observe up to 38% reduction in lasing threshold current, for lasers with HfO2 passivation. We model the losses of the cavity due to both insulator and metal contacts of the lasers using Comsol Multiphysics for various widths. We find that the loss due to absorption in the dielectric is a significant effect for Si3N4 passivated lasers and lasers in the 8-12-μm range may benefit from low loss passivation materials such as HfO2. Our results suggest that low-loss long wavelength quantum cascade lasers can be realized without epitaxial overgrowth.
Open Access
Near-unity emitting copper-doped colloidal semiconductor quantum wells for luminescent solar concentrators
(Wiley-VCH Verlag, 2017) Sharma, M.; Gungor K.; Yeltik A.; Olutas M.; Guzelturk, B.; Kelestemur Y.; Erdem, T.; Delikanli S.; McBride, J. R.; Demir, Hilmi Volkan
Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped colloidal quantum dots (CQDs) have been demonstrated to be promising materials for luminescent solar concentrators (LSCs) as they can be engineered for providing highly tunable and Stokes-shifted emission in the solar spectrum. However, existing doped CQDs that are aimed for full solar spectrum LSCs suffer from moderately low quantum efficiency, intrinsically small absorption cross-section, and gradually increasing absorption profiles coinciding with the emission spectrum, which together fundamentally limit their effective usage. Here, the authors show the first account of copper doping into atomically flat colloidal quantum wells (CQWs). In addition to Stokes-shifted and tunable dopant-induced photoluminescence emission, the copper doping into CQWs enables near-unity quantum efficiencies (up to ≈97%), accompanied by substantially high absorption cross-section and inherently step-like absorption profile, compared to those of the doped CQDs. Based on these exceptional properties, the authors have demonstrated by both experimental analysis and numerical modeling that these newly synthesized doped CQWs are excellent candidates for LSCs. These findings may open new directions for deployment of doped CQWs in LSCs for advanced solar light harvesting technologies.
Open Access
Nonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodes
(Optical Society of American (OSA), 2015) Zhang, Y.P.; Zhang, Z.-H.; Liu W.; Tan, S.T.; Ju, Z.G.; Zhang X.L.; Ji, Y.; Wang L.C.; Kyaw, Z.; Hasanov, N.; Zhu, B.B.; Lu, S.P.; Sun X.W.; Demir, Hilmi Volkan
In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficiency droop can be reduced when a constant Shockley-Read-Hall (SRH) nonradiative recombination lifetime is used for all the samples. However, the experimental results indicate that, though the efficiency droop is suppressed, the LED optical power is first improved and then degraded with the increasing QW number. The analysis of the measured external quantum efficiency (EQE) with the increasing current revealed that an increasingly dominant SRH nonradiative recombination is induced with more epitaxial QWs, which can be related to the defect generation due to the strain relaxation, especially when the effective thickness exceeds the critical thickness. These observations were further supported by the carrier lifetime measurement using a pico-second time-resolved photoluminescence (TRPL) system, which allowed for a revised numerical modeling with the different SRH lifetimes considered. This work provides useful guidelines on choosing the critical QW number when designing LED structures. © 2014 Optical Society of America.
Open Access
Quantum effects in electrical and thermal transport through nanowires
(Institute of Physics Publishing, 2001) Çıracı, Salim; Buldum, A.; Batra, I. P.
Nanowires, point contacts and metallic single-wall carbon nanotubes are one-dimensional nanostructures which display important size-dependent quantum effects. Quantization due to the transverse confinement and resultant finite level spacing of electronic and phononic states are responsible for some novel effects. Many studies have revealed fundamental and technologically important properties, which are being explored for fabricating future nanodevices. Various simulation studies based on the classical molecular dynamics method and combined force and current measurements have shown the relationship between atomic structure and transport properties. The atomic, electronic and transport properties of these nanostructures have been an area of active research. This brief review presents some quantum effects in the electronic and phononic transport through nanowires.