High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts

Abstract

AlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured. True solar-blind detection was also ensured.