45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes

Date

2001

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

Source Title

IEEE Photonics Technology Letters

Print ISSN

1041-1135

Electronic ISSN

Publisher

IEEE

Volume

13

Issue

7

Pages

705 - 707

Language

English

Journal Title

Journal ISSN

Volume Title

Series

Abstract

High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.

Course

Other identifiers

Book Title

Citation