High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes

Date

1998

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Proceedings of the 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998

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1092-8081

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IEEE

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Pages

157 - 158

Language

English

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Abstract

Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.

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