High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
Date
1998
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Source Title
Proceedings of the 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998
Print ISSN
1092-8081
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Publisher
IEEE
Volume
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Pages
157 - 158
Language
English
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Abstract
Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.
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Keywords
Cavity resonators , Molecular beam epitaxy , Ohmic contacts , Optical waveguides , Photocurrents , Photodetectors , Quantum efficiency , Semiconducting aluminum compounds , Semiconducting gallium arsenide , Semiconductor device manufacture , Semiconductor device structures , Semiconductor device testing , Bragg mirrors , Resonant cavity enhanced (RCE) photodiodes , Photodiodes