Publication: High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
Date
1998
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.
Description
Date of Conference: 1-4 December 1998
Conference Name: 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998
Conference Name: 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998
Keywords
Cavity resonators, Molecular beam epitaxy, Ohmic contacts, Optical waveguides, Photocurrents, Photodetectors, Quantum efficiency, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor device manufacture, Semiconductor device structures, Semiconductor device testing, Bragg mirrors, Resonant cavity enhanced (RCE) photodiodes, Photodiodes