High-speed resonant-cavity-enhanced Schottky photodiodes

Date

1998

Authors

Ata, Erhan P.
Bıyıklı, Necmi
Demirel, Ekrem
Özbay, Ekmel
Gökkavas, M.
Onat, B.
Ünlü, M. S.
Tuttle, G.

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Abstract

The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method.

Source Title

Proceedings of the Conference on Lasers and Electro-Optics, CLEO 1998

Publisher

IEEE

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Published Version (Please cite this version)

Language

English