1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Date
2000
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Abstract
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
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Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
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IEEE, Piscataway, NJ, United States
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Cavity resonators, Electric conductors, Light absorption, Mirrors, Ohmic contacts, Photoemission, Quantum efficiency, Schottky barrier diodes, Semiconducting gallium arsenide, Semiconductor device manufacture, Silicon nitride, Fabry-Perot cavity, Fowler relation, Monolithic microfabrication process, Resonant cavity enhancement, Schottky barrier internal photoemission photodetector, Photodetectors
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English