1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Date
2000
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Source Title
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
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Publisher
IEEE, Piscataway, NJ, United States
Volume
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Pages
368 - 369
Language
English
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Abstract
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
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Keywords
Cavity resonators , Electric conductors , Light absorption , Mirrors , Ohmic contacts , Photoemission , Quantum efficiency , Schottky barrier diodes , Semiconducting gallium arsenide , Semiconductor device manufacture , Silicon nitride , Fabry-Perot cavity , Fowler relation , Monolithic microfabrication process , Resonant cavity enhancement , Schottky barrier internal photoemission photodetector , Photodetectors