1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector

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Abstract

GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.

Source Title

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Publisher

IEEE, Piscataway, NJ, United States

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Citation

Published Version (Please cite this version)

Language

English