1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
IEEE, Piscataway, NJ, United States
368 - 369
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
Cavity resonators, Electric conductors, Light absorption, Mirrors, Ohmic contacts, Photoemission, Quantum efficiency, Schottky barrier diodes, Semiconducting gallium arsenide, Semiconductor device manufacture, Silicon nitride, Fabry-Perot cavity, Fowler relation, Monolithic microfabrication process, Resonant cavity enhancement, Schottky barrier internal photoemission photodetector, Photodetectors