1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Date
2000
Authors
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
BUIR Usage Stats
18
views
views
27
downloads
downloads
Citation Stats
Series
Abstract
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
Source Title
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Publisher
IEEE, Piscataway, NJ, United States
Course
Other identifiers
Book Title
Keywords
Cavity resonators, Electric conductors, Light absorption, Mirrors, Ohmic contacts, Photoemission, Quantum efficiency, Schottky barrier diodes, Semiconducting gallium arsenide, Semiconductor device manufacture, Silicon nitride, Fabry-Perot cavity, Fowler relation, Monolithic microfabrication process, Resonant cavity enhancement, Schottky barrier internal photoemission photodetector, Photodetectors
Degree Discipline
Degree Level
Degree Name
Citation
Permalink
Published Version (Please cite this version)
Collections
Language
English