1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector

Date
2000
Advisor
Instructor
Source Title
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Print ISSN
Electronic ISSN
Publisher
IEEE, Piscataway, NJ, United States
Volume
Issue
Pages
368 - 369
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.

Course
Other identifiers
Book Title
Keywords
Cavity resonators, Electric conductors, Light absorption, Mirrors, Ohmic contacts, Photoemission, Quantum efficiency, Schottky barrier diodes, Semiconducting gallium arsenide, Semiconductor device manufacture, Silicon nitride, Fabry-Perot cavity, Fowler relation, Monolithic microfabrication process, Resonant cavity enhancement, Schottky barrier internal photoemission photodetector, Photodetectors
Citation
Published Version (Please cite this version)