1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector

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1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector.pdf (231.56 KB)

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2000

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Abstract

GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.

Source Title

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

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IEEE, Piscataway, NJ, United States

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Keywords

Cavity resonators, Electric conductors, Light absorption, Mirrors, Ohmic contacts, Photoemission, Quantum efficiency, Schottky barrier diodes, Semiconducting gallium arsenide, Semiconductor device manufacture, Silicon nitride, Fabry-Perot cavity, Fowler relation, Monolithic microfabrication process, Resonant cavity enhancement, Schottky barrier internal photoemission photodetector, Photodetectors

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http://hdl.handle.net/11693/24952

Published Version (Please cite this version)

https://doi.org/10.1109/CLEO.2000.907129

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Scholarly Publications - Physics

Language

English

Type

Article