1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Date
2000
Authors
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Source Title
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
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Publisher
IEEE, Piscataway, NJ, United States
Volume
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Pages
368 - 369
Language
English
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Journal Title
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Volume Title
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18
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24
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Abstract
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
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Keywords
Cavity resonators, Electric conductors, Light absorption, Mirrors, Ohmic contacts, Photoemission, Quantum efficiency, Schottky barrier diodes, Semiconducting gallium arsenide, Semiconductor device manufacture, Silicon nitride, Fabry-Perot cavity, Fowler relation, Monolithic microfabrication process, Resonant cavity enhancement, Schottky barrier internal photoemission photodetector, Photodetectors