Browsing by Subject "Raman spectroscopy"

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Open Access
A comprehensive analysis of GaN HEMTs: electro-mechanical behavior, defect generation, and drain LAG reduction with HfO2 layers
(2023-07) Güneş, Burak
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) have rapidly emerged as a transformative technology, owing to the unique properties of the substrate material. They are poised to become a revolutionary advancement in RF amplifier applications, primarily due to their capability to operate at high frequencies and power levels with superior efficiency compared to conventional devices. Despite the rapid progressions, a noticeable gap persists in the literature regarding the relation-ship between mechanical stresses, defect generation, and their subsequent impact on the electrical characteristics of AlGaN/GaN HEMTs. Moreover, current dispersion effects, which are trapping induced reductions in output power, continues to remain a pressing issue. To address these limitations, this study first adopts a multifaceted approach and integrates mechanical simulations and Raman spectroscopy, in order to resolve fine details of stress distributions that a diffraction-limited Raman probe cannot resolve. This enables an extensive modeling of stresses in a typical HEMT structure and helps elucidate the underlying dynamics of defect generation, with the ultimate goal of informing and guiding the development of advanced fabrication techniques. In a second study, an ultrathin blanket dielectric deposition approach was devised to alleviate surface trapping, and consequently, mitigate current dispersion. The proposed streamlined fabrication process yielded a substantial improvement in device performance without compromising the transistor transfer characteristics.
Open Access
Analysis of the raman frequency shifts for the lattice modes and vibrons related to the thermodynamic quantities in the η phase of solid nitrogen
(2013) Yurtseven, Hamit; Akay, Özge
The thermodynamic quantities of the isothermal compressibility, thermal expansion and the specific heat are calculated here as a function of pressure by using the observed Raman frequencies of the lattice modes and vibrons in the ? phase of solid nitrogen. The Pippard relations and their spectroscopic modifications are constructed, and the slope dP/dT is deduced from the Raman frequency shifts in this phase of N2. It is shown that the thermodynamic quantities can be predicted from the Raman frequency shifts, in particular, in the ? phase of solid nitrogen.
Open Access
Anharmonicity in GaTe layered crystals
(Wiley-VCH Verlag GmbH & Co. KGaA, 2002) Aydınlı, Atilla; Gasanly, N. M.; Uka, A.; Efeoglu, H.
The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the optical phonon lines are observed with increasing temperature. Comparison between the experimental data and theories of the shift of the phonon lines during heating of the crystal showed that the experimental dependencies can be explained by contributions from thermal expansion and lattice anharmonicity. Lattice anharmonicity is determined to be due to three-phonon processes.
Open Access
Concentric ring structures as efficient SERS substrates
(Institute of Electrical and Electronics Engineers, 2013) Cinel, N. A.; Cakmakyapan, S.; Ertas, G.; Özbay, Ekmel
Plasmonic nanopatterned structures that can work as highly efficient surface-enhanced Raman scattering (SERS) substrates are presented in this study. A 'coupled' concentric ring structure has been designed, fabricated, tuned, and compared to an 'etched' concentric ring structure and plain gold film via SERS experiments. The proposed design gives Raman signal intensity 630 times larger than plain gold film and 8 times larger than an 'etched' concentric ring structure. The surface plasmons were imaged with the fluorescence imaging technique and supporting numerical simulations were done.
Open Access
CVD grown 2D MoS2 layers: a photoluminescence and fluorescence lifetime imaging study
(Wiley-VCH Verlag, 2016) Özden, A.; Şar, H.; Yeltik A.; Madenoğlu, B.; Sevik, C.; Ay, F.; Perkgöz, N. K.
In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS2. µ-Raman, µ-photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) are utilized to probe the fluorescence lifetime and photoluminescence properties of individual flakes of MoS2 films. Usage of these three techniques allows identification of the grown layers, grain boundaries, structural defects and their relative effects on the PL and fluorescence lifetime spectra. Our investigation on individual monolayer flakes reveals a clear increase of the fluorescence lifetime from 0.3 ns to 0.45 ns at the edges with respect to interior region. On the other hand, investigation of the film layer reveals quenching of PL intensity and lifetime at the grain boundaries. These results could be important for applications where the activity of edges is important such as in photocatalytic water splitting. Finally, it has been demonstrated that PL mapping and FLIM are viable techniques for the investigation of the grain-boundaries. (Figure presented.). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Open Access
E-Beam lithography designed substrates for surface enhanced Raman spectroscopy
(Elsevier BV, 2015-06) Cinel, N. A.; Cakmakyapan, S.; Butun, S.; Ertas, G.; Özbay, Ekmel
Surface Enhanced Raman Spectroscopy (SERS) is a popular method that amplifies weak Raman signals from Raman-active analyte molecules making use of certain specially-prepared metallic surfaces. The main challenge in SERS is to design and fabricate highly repeatable, predictable, and sensitive substrates. There are many fabrication methods that strive to achieve this goal, which are briefly summarized in this paper. The E-beam lithography method is proposed to be superior to the mentioned techniques. In this paper, we review how EBL can be utilized in the preparation of SERS substrates and we discuss the contributions to the field by the Özbay group.
Open Access
Effective mass of electron in monolayer graphene: Electron-phonon interaction
(AIP Publishing LLC, 2013-01-25) Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel
Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.
Open Access
Fe promoted NOx storage materials: structural properties and NOx uptake
(American Chemical Society, 2010) Kayhan, E.; Andonova, S. M.; Şentürk, G. S.; Chusuei, C. C.; Ozensoy, E.
Fe promoted NOx storage materials were synthesized in the form of FeOx/BaO/Al2O3 ternary oxides with varying BaO (8 and 20 wt %) and Fe (5 and 10 wt %) contents. Synthesized NOx storage materials were investigated via TEM, EELS, BET, FTIR, TPD, XRD, XPS, and Raman spectroscopy, and the results were compared with the conventional BaO/Al2O3 NOx storage system. Our results suggest that the introduction of Fe in the BaO/Al2O3 system leads to the formation of additional NOx storage sites which store NOx mostly in the form of bidentate nitrates. NO2 adsorption experiments at 323 K via FTIR indicate that, particularly in the early stages of the NOx uptake, the NOx storage mechanism is significantly altered in the presence of Fe sites where a set of new surface nitrosyl and nitrite groups were detected on the Fe sites and the surface oxidation of nitrites to nitrates is significantly hindered with respect to the BaO/Al2O3 system. Evidence for the existence of both Fe3+ as well as reduced Fe2+/(3-x)+ sites on the freshly pretreated materials was detected via EELS, FTIR, Raman, and XRD experiments. The influence of the Fe sites on the structural properties of the synthesized materials was also studied by performing ex situ annealing protocols within 323-1273 K followed by XRD and Raman experiments where the temperature dependent changes in the morphology and the composition of the surface domains were analyzed in detail. On the basis of the TPD data, it was found that the relative stability of the stored NOx species is influenced by the morphology of the Ba and Fe containing NOx-storage domains. The relative stabilities of the investigated NOx species were found to increase in the following order: N2O3/NO+ < nitrates on γ-Al2O3 < surface nitrates on BaO < bidentate nitrates on FeOx sites < bulk nitrates on BaO.
Open Access
Fine-tuning the dispersion and the mobility of BaO domains on NO x storage materials via TiO2 anchoring sites
(American Chemical Society, 2010) Andonova, S. M.; Şentürk, G. S.; Ozensoy, E.
In an attempt to control the surface dispersion and the mobility of BaO domains on NOx storage materials, TiO2/TiOx anchoring sites were introduced on/inside the conventional γ-Al 2O3 support matrix. BaO/TiO2/Al 2O3 ternary oxide materials were synthesized via two different sol-gel preparation techniques, with varying surface compositions and morphologies. The synthesized NOx storage materials were studied via XRD, Raman spectroscopy, BET surface area analysis, TPD, XPS, SEM, EDX-mapping, and in situ FTIR spectroscopy of adsorbed NO2. NOx uptake properties of the BaO/TiO2/Al2O3 materials were found to be strongly influenced by the morphology and the surface structure of the TiO2/TiOx domains. An improved Ba surface dispersion was observed for the BaO/TiO2/Al2O3 materials synthesized via the coprecipitation of alkoxide precursors, which was found to originate mostly from the increased fraction of accessible TiO 2/TiOx sites on the surface. These TiO2/ TiOx sites function as strong anchoring sites for surface BaO domains and can be tailored to enhance surface dispersion of BaO. TPD experiments suggested the presence of at least two different types of NOx species adsorbed on the TiO2/TiOx sites, with distinctively different thermal stabilities. The relative stability of the NOx species adsorbed on the BaO/TiO2/Al2O3 system was found to increase in the following order: NO+/N2O 3 on alumina ≪ nitrates on alumina < surface nitrates on BaO < bridged/bidentate nitrates on large/isolated TiO2 clusters < bulk nitrates on BaO on alumina surface and bridged/bidentate nitrates on TiO2 crystallites homogenously distributed on the surface < bulk nitrates on the BaO sites located on the TiO2 domains. © 2010 American Chemical Society.
Open Access
From aluminum foil to two-dimensional nanocrystals using ultrasonic exfoliation
(American Chemical Society, 2021-04-15) Lu, W.; Birmingham, B.; Voronine, D. V.; Stolpman, D.; Ambardar, S.; Erdoğan, Deniz Altunöz; Özensoy, Emrah; Zhang, Z.; Solouki, T.
Al nanostructures have unique optical properties such as widely tunable surface plasmon resonances from deep UV to NIR that can be used for label-free fluorescence enhancement and surface-enhanced Raman scattering. Various Al nanostructures have been fabricated using sophisticated “top-down” lithographic and “bottom-up” colloidal methods. Here, we developed a simple and efficient method of synthesizing two-dimensional (2D) aluminum (Al) nanocrystals from commercially available Al foil using ultrasonic exfoliation under ambient environment. 2D Al nanocrystals with sizes from a few hundred nanometers to several micrometers and thickness in the tens of nanometers were isolated through centrifugation separation. The exfoliated 2D Al nanocrystals are covered with a passivated Al2O3 nanolayer. The determined exfoliation mechanism is a combination of the preferred cleavage along the (111) surface planes and layer-by-layer Al2O3 exfoliation from the surface of the 2D Al nanocrystals. We demonstrate that the 2D Al nanocrystals can be assembled at water/air interface and transferred to different substrates to form 2D Al nanocrystal films. These 2D Al nanocrystal films exhibit surface plasmon resonance in the visible spectral range and show enhanced Raman signals of adenine using a 532 nm excitation. These 2D Al nanocrystal films could be further developed for new optical and sensing applications.
Open Access
Hydrogen-induced sp2-sp3 rehybridization in epitaxial silicene
(American Physical Society, 2017) Solonenko, D.; Dzhagan, V.; Cahangirov, S.; Bacaksiz, C.; Sahin, H.; Zahn, D. R. T.; Vogt, P.
We report on the hydrogenation of (3×3)/(4×4) silicene epitaxially grown on Ag(111) studied by in situ Raman spectroscopy and state-of-the-art ab initio calculations. Our results demonstrate that hydrogenation of (3×3)/(4×4) silicene leads to the formation of two different atomic structures which exhibit distinct spectral vibrational modes. Raman selection rules clearly show that the Si atoms undergo a rehybridization in both cases from a mixed sp2-sp3 to a dominating sp3 state increasing the distance between the two silicene sublattices. This results in a softening of the in-plane and a stiffening of the out-of-plane phonon modes. Nevertheless, hydrogenated epitaxial silicene retains a two-dimensional nature and hence can be considered as epitaxial silicane. The level of hydrogenation can be determined by the intensity ratio of the Raman modes with different symmetries. © 2017 American Physical Society.
Open Access
Label-free identification of exosomes using raman spectroscopy and machine learning
(Wiley-VCH Verlag GmbH & Co. KGaA, 2023-01-15) Parlatan, U.; Ozen, M.O.; Kecoglu, I.; Koyuncu, B.; Torun, H.; Khalafkhany, D.; Loc, I.; Ogut, M.G.; Inci, Fatih; Akin, D.; Solaroglu, I.; Ozoren, N.; Unlu, M. B.; Demirci, U.
Exosomes, nano-sized extracellular vesicles (EVs) secreted from cells, carry various cargo molecules reflecting their cells of origin. As EV content, structure, and size are highly heterogeneous, their classification via cargo molecules by determining their origin is challenging. Here, a method is presented combining surface-enhanced Raman spectroscopy (SERS) with machine learning algorithms to employ the classification of EVs derived from five different cell lines to reveal their cellular origins. Using an artificial neural network algorithm, it is shown that the label-free Raman spectroscopy method's prediction ratio correlates with the ratio of HT-1080 exosomes in the mixture. This machine learning-assisted SERS method enables a new direction through label-free investigation of EV preparations by differentiating cancer cell-derived exosomes from those of healthy. This approach will potentially open up new avenues of research for early detection and monitoring of various diseases, including cancer.
Open Access
Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films
(Materials Research Society, 2011) Alagoz, A. S.; Genisel, M. F.; Foss, Steinar; Finstad, T. G.; Turan, R.
Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, high density and low cost of fabrication. Scaling limitations of top-down fabrication approaches can be overcome in next generation flash memories by replacing continuous floating gate with array of nanocrystals. Germanium (Ge) is a good candidate for nanocrystal based flash memories due its small band gap. In this work, we present effect of silicon dioxide (SiO 2) host matrix density on Ge nanocrystals morphology. Low density Ge+SiO 2 layers are deposited between high density SiO 2 layers by using off-angle magnetron sputter deposition. After high temperature post-annealing, faceted and elongated Ge nanocrystals formation is observed in low density layers. Effects of Ge concentration and annealing temperature on nanocrystal morphology and mean size were investigated by using transmission electron microscopy. Positive correlation between stress development and nanocrystal size is observed at Raman spectroscopy measurements. We concluded that non-uniform stress distribution on nanocrystals during growth is responsible from faceted and elongated nanocrystal morphology.
Open Access
Nature of the Ti-Ba interactions on the BaO/TiO2/Al 2O3 NOx storage system
(2009) Andonova, S. M.; Şentürk, G. S.; Kayhan, E.; Ozensoy, E.
A ternary oxide-based NO* storage material in the form of BaOZTiO2Zy-Al2O3 was synthesized and characterized. Thermally induced structural changes occurring on the surfaces of the TiO2Zy-Al2O3 and BaOZ TiO 2Zy-Al2O3 systems were studied in a comparative manner within 300-1273 K via X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, and BET surface area analysis. The surface acidity of the studied oxide systems was also investigated via pyridine adsorption monitored by in-situ Fourier transform infrared (FTIR) spectroscopy. BaO/TiO2γ-Al 2O3 ternary oxide was synthesized by incorporating different loadings of (8-20 wt %) BaO onto the TiO2/γ Al 2O3 support material, which was originally prepared using the sol-gel method. In the TiO2Zy-Al2O3 binary oxide support material, anatase phase exhibited a relatively high thermal stability at T < 1073 K. The presence of TiO2 domains on the surface of the alumina particles was found to alter the surface acidity of alumina by providing new medium-strength Lewis acid sites. SEMZEDX results indicate that in the BaO/TiO2γ-Al2O3 system, TiO2 domains present a significant affinity toward BaO and/or Ba(NO3) 2 resulting in a strong Ti-Ba interaction and the formation of overlapping domains on the surface. The presence of TiO2 also leads to a decrease in the decomposition temperature of the Ba(N03) 2 phase with respect to the Ti-free Ba(N03) 2ZyAl2O3 system. Such a destabilization is likely to occur due to a weaker interaction between Ba(N03) 2 and y-Al203 domains in the ternary oxide as well as due to the change in the surface acidity in the presence of TiO 2. At relatively high temperatures (e.g., 873-1273 K) formation of complex structures in the form of BaTiO3, Ba1.23Al 2.46Ti5.54O16, BaTiO5, andor Ba x:AlyTizOn., were also observed. © 2009 American Chemical Society.
Open Access
Organization of bridging organics in periodic mesoporous organosilicas (PMOs)-polarization micro-raman spectroscopy
(Wiley, 2001) Dag, Ö.; Ozin, G. A.
The organization of bridging organics in oriented periodic mesoporous organosilica film (OPMOF) was demonstrated using the polarization micro-Raman spectroscopy (PMRS) in conjunction with powder x-ray diffraction (PXRD) and polarization optical microscopy (POM). The synthesis and the structural characterization of hexagonal symmetry OPMOF containing bridge-bonded ethane, ethene inside the silica channel walls were described. The mesoscale channels were found to run parallel to the surface of the underlying glass substrates as demonstrated by the PXRD measurements. A hexagonal array of channels with glassy silica organosilica walls was the best description of the structure shown by the PMRS measurements of OPMOF.
Open Access
Production and structural characterization of biosurfactant produced by newly isolated staphylococcus xylosus STF1 from petroleum contaminated soil
(Elsevier BV, 2015) Keskin, N. O. S.; Han, D.; Ozkan A.D.; Angun, P.; Umu, O. C. O.; Tekinay, T.
Petroleum-contaminated soil was used to isolate and characterize biosurfactant producing bacteria. The strain could produce higher amount of biosurfactant in medium supplemented with motor oil as sole source of carbon and energy. A new biosurfactant producing bacterium, designated as Staphylococcus xylosus STF1 based on morphological, physiological, biochemical tests and 16S rRNA gene sequencing. The isolated bacterium was first screened for the ability to produce biosurfactant. Partial sequence of STF1 strain of 16S rDNA gene was highly similar to those of various members of the family Staphylococcaceae. Biochemical characterizations including FT-IR, Raman spectroscopy and Mass spectroscopy studies suggested the biosurfactant to be lipopeptide. Study also confirmed that the cell free supernatant exhibited high emulsifying activity against the different hydrocarbons. Moreover, the partially purified biosurfactant exhibited antimicrobial activity by inhibiting the growth of several bacterial species. The strain could be a potential candidate for the production of polypeptide biosurfactant which could be useful in a variety of biotechnological and industrial processes, particularly in the food and oil industry. © 2015 Elsevier B.V.
Open Access
Raman and X-ray photoelectron spectroscopic studies of graphene devices for identification of doping
(Elsevier B.V., 2017) Gokturk, P. A.; Kakenov, N.; Kocabas, C.; Süzer, Şefik
Tunability of electronic properties of graphene is one of the most promising properties to integrate it to high efficiency devices in the field of electronics. Here we demonstrate the substrate induced doping of CVD graphene devices using polymers with different functional groups. Both X-Ray secondary electron cut-off and Raman spectra confirm p-type doping of a PVC-Graphene film when compared to a PMMA-Graphene one. We also systematically analyzed the reversible doping effect of acid-base exposure and UV illumination to further dope/undope the polymer supported graphene devices. The shifts in the Raman 2D band towards lower and then to higher wavenumbers, with sequential exposure to ammonia and hydrochloric acid vapors, suggest n-type doing and restoration of graphene to its original state. Finally, the n-type doping with UV irradiation on half-covered samples was utilized and shown by both XPS and Raman to create two regions with different electronic properties and resistances. These type of controlled and reversible doping routes offer new paths for electronic devices especially towards fabricating graphene p-n junctions.
Open Access
Raman enhancement on a broadband meta-surface
(American Chemical Society, 2012-07-30) Ayas S.; Güner, H.; Türker, B.; Ekiz, O. O.; Dirisaglik, F.; Okyay, Ali Kemal; Dâna, A.
Plasmonic metamaterials allow confinement of light to deep subwavelength dimensions, while allowing for the tailoring of dispersion and electromagnetic mode density to enhance specific photonic properties. Optical resonances of plasmonic molecules have been extensively investigated; however, benefits of strong coupling of dimers have been overlooked. Here, we construct a plasmonic meta-surface through coupling of diatomic plasmonic molecules which contain a heavy and light meta-atom. Presence and coupling of two distinct types of localized modes in the plasmonic molecule allow formation and engineering of a rich band structure in a seemingly simple and common geometry, resulting in a broadband and quasi-omni-directional meta-surface. Surface-enhanced Raman scattering benefits from the simultaneous presence of plasmonic resonances at the excitation and scattering frequencies, and by proper design of the band structure to satisfy this condition, highly repeatable and spatially uniform Raman enhancement is demonstrated. On the basis of calculations of the field enhancement distribution within a unit cell, spatial uniformity of the enhancement at the nanoscale is discussed. Raman scattering constitutes an example of nonlinear optical processes, where the wavelength conversion during scattering may be viewed as a photonic transition between the bands of the meta-material.
Open Access
Raman scattering from confined phonons in GaAs/AlGaAs quantum wires
(Academic Press, 1998) Bairamov, B. H.; Aydınlı, Atilla; Tanatar, Bilal; Güven, K.; Gurevich, S.; Mel'tser, B. Ya.; Ivanov, S. V.; Kop'ev, P. S.; Smirnitskii, V. B.; Timofeev, F. N.
We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3Ga 0.7As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ω L10 = 285.6 cm -1 for L = 11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderlein† as applied to the GaAs/Al 0.3Ga 0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques. © 1998 Academic Press.
Open Access
SiC substrate effects on electron transport in the epitaxial graphene layer
(Springer, 2014) Arslan, E.; Çakmakyapan S.; Kazar, Ö.; Bütün, S.; Lişesivdin, S. B.; Cinel, N. A.; Ertaş, G.; Ardalı, Ş.; Tıraş, E.; Jawad-ul-Hassan,; Özbay, Ekmel; Janzén, E.
Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm2 /Vs at 300 K) and one low-mobility carrier (1115 cm2 /Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.