Effective mass of electron in monolayer graphene: Electron-phonon interaction

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Abstract

Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.

Source Title

Journal of Applied Physics

Publisher

AIP Publishing LLC

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Keywords

Acoustic phonons, Effective mass, Electric field dependencies, Electron energies, Electronic transport properties, Energy relaxation, Hall effect measurement, Lattice temperatures, Number of layers, Power-losses, Shubnikov-de Haas, SiC substrates, Temperature dependence, Temperature dependencies, Temperature range, Electric fields, Electron temperature, Monolayers, Raman spectroscopy, Semiconducting indium compounds, Silicon carbide, Transport properties, Graphene

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Citation

Published Version (Please cite this version)

Language

English