SiC substrate effects on electron transport in the epitaxial graphene layer
Date
2014
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Electronic Materials Letters
Print ISSN
1738-8090
Electronic ISSN
Publisher
Springer
Volume
10
Issue
2
Pages
387 - 391
Language
English
Type
Journal Title
Journal ISSN
Volume Title
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Abstract
Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm2 /Vs at 300 K) and one low-mobility carrier (1115 cm2 /Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.