Browsing by Subject "Monolithic integrated circuits"
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Item Open Access Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing(2008-10) Yu, H.-Y.; Park, J.-H.; Okyay, Ali Kemal; Saraswat, K. C.We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society.Item Open Access Design considerations for MMIC distributed amplifiers(IEEE, 1994) Ergun, Şanlı; Atalar, AbdullahThe bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated.Item Open Access High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration(IEEE, 2009) Yu, H.-Y.; Kobayashi, M.; Jung, W. S.; Okyay, Ali Kemal; Nishi, Y.; Saraswat, K. C.We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.Item Open Access High-stability, high-efficiency organic monoliths made of oligomer nanoparticles wrapped in organic matrix(American Chemical Society, 2016) Soran-Erdem Z.; Erdem, T.; Gungor K.; Pennakalathil, J.; Tuncel, D.; Demir, Hilmi VolkanOligomer nanoparticles (OL NPs) have been considered unsuitable for solid-state lighting due to their low quantum yields and low temperature stability of their emission. Here, we address these problems by forming highly emissive and stable OL NPs solids to make them applicable in lighting. For this purpose, we incorporated OL NPs into sucrose matrix and then prepared their all-organic monoliths. We show that wrapping the OL NPs in sucrose significantly increases their quantum yield up to 44%, while the efficiency of their dispersion and direct solid-film remain only at ∼6%. We further showed ∼3-fold improved temperature stability of OL NP emission within these monoliths. Our experiments revealed that a physical passivation mechanism is responsible from these improvements. As a proof-of-concept demonstration, we successfully employed these high-stability, high-efficiency monoliths as color converters on a blue LED chip. Considering the improved optical features, low cost, and simplicity of the presented methodology, we believe that this study holds great promise for a ubiquitous use of organic OL NPs in lighting and possibly in other photonic applications.Item Open Access Integrated AlGaN quadruple-band ultraviolet photodetectors(IOP Publishing, 2012-04-27) Gökkavas, M.; Butun, S.; Caban, P.; Strupinski, W.; Özbay, EkmelMonolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.Item Open Access Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon(Elsevier, 2015) Hyung Nam J.; Alkis, S.; Nam, D.; Afshinmanesh F.; Shim J.; Park, J.; Brongersma, M.; Okyay, Ali Kemal; Kamins, T.I.; Saraswat, K.A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength. © 2015 Elsevier B.V. All rights reserved.Item Open Access Selective-area high-quality germanium growth for monolithic integrated optoelectronics(Institute of Electrical and Electronics Engineers, 2012-03-02) Yu, H. Y.; Park, J. H.; Okyay, Ali Kemal; Saraswat, K. C.Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.Item Open Access Silicon-Germanium multi-quantum well photodetectors in the near infrared(Optical Society of American (OSA), 2012) Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, Ali KemalSingle crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America.