High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

Date
2009
Advisor
Instructor
Source Title
Proceedings of the 2009 IEEE International Electron Devices Meeting, IEDM 2009
Print ISSN
0163-1918
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
29.4.1 - 29.4.4
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.

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Other identifiers
Book Title
Keywords
Heteroepitaxy, High quality single crystals, In-situ doping, Monolithic integration, nMOSFETs, Raised source/drain, Series resistances, Si CMOS, Source and drains, Source/drain series resistances, Electric resistance, Electron devices, Electron mobility, Epitaxial growth, Germanium, Monolithic integrated circuits, Semiconducting silicon compounds, Silicon, Single crystals, MOSFET devices
Citation
Published Version (Please cite this version)