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  2. Engineering
  3. Department of Electrical and Electronics Engineering
  4. Scholarly Publications - Electrical and Electronics Engineering
  5. Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
 

Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

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Defect_reduction_of_Ge_on_Si_by_selective_epitaxy_and_hydrogen_annealing..pdf (381.02 KB)

Date

2008-10

Authors

Yu, H.-Y.
Park, J.-H.
Okyay, Ali Kemal
Saraswat, K. C.

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Abstract

Source Title

ECS Transactions

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Keywords

AFM, Capacitor structures, Defect reductions, Dislocation densities, Hetero epitaxies, High qualities, Hydrogen annealing, In-situ doping, Monolithic integrations, Selective depositions, Selective epitaxies, Si CMOS, Epitaxial growth, Hydrogen, Monolithic integrated circuits, MOS capacitors, Semiconducting germanium compounds, Semiconducting silicon compounds, Silicon, Silicon alloys, Germanium

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Permalink

http://hdl.handle.net/11693/26788

Published Version (Please cite this version)

http://dx.doi.org/10.1149/1.2986841

Collections

Scholarly Publications - Electrical and Electronics Engineering

Language

English

Type

Conference Paper
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