Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

Date

2008-10

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ECS Transactions

Print ISSN

1938-5862

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Pages

823 - 828

Language

English

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Abstract

We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society.

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Published Version (Please cite this version)