Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

Date
2008-10
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Source Title
ECS Transactions
Print ISSN
1938-5862
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Pages
823 - 828
Language
English
Type
Conference Paper
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Abstract

We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society.

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Keywords
AFM, Capacitor structures, Defect reductions, Dislocation densities, Hetero epitaxies, High qualities, Hydrogen annealing, In-situ doping, Monolithic integrations, Selective depositions, Selective epitaxies, Si CMOS, Epitaxial growth, Hydrogen, Monolithic integrated circuits, MOS capacitors, Semiconducting germanium compounds, Semiconducting silicon compounds, Silicon, Silicon alloys, Germanium
Citation
Published Version (Please cite this version)