Integrated AlGaN quadruple-band ultraviolet photodetectors

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Integrated AlGaN quadruple-band ultraviolet photodetectors.pdf (711.17 KB)

Date

2012-04-27

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Source Title

Semiconductor Science and Technology

Print ISSN

0268-1242

Electronic ISSN

Publisher

IOP Publishing

Volume

27

Issue

6

Pages

065004-1 - 065004-5

Language

English

Type

Article

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Abstract

Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.

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Keywords

AlGaN , Back-illuminated , Monolithically integrated , Spectral responsivity , Thick epitaxial layers , Ultra-violet photodetectors , Epitaxial growth , Monolithic integrated circuits , Photodetectors

Citation

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http://hdl.handle.net/11693/21450

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http://dx.doi.org/10.1088/0268-1242/27/6/065004

Collections

Nanotechnology Research Center (NANOTAM)
Department of Electrical and Electronics Engineering
Department of Physics