Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

Date
2015
Advisor
Instructor
Source Title
Journal of Crystal Growth
Print ISSN
220248
Electronic ISSN
Publisher
Elsevier
Volume
416
Issue
Pages
21 - 27
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength. © 2015 Elsevier B.V. All rights reserved.

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Book Title
Keywords
A1. Defects, A3. Chemical vapor deposition process, B2. Semiconducting germanium, B3. Infrared devices, Chemical mechanical polishing, Chemical polishing, Chemical vapor deposition, Crystalline materials, Electromagnetic wave absorption, Light absorption, Monolithic integrated circuits, Semiconducting germanium, Silicon, Silicon oxides, Silicon wafers, Transmission electron microscopy, Chemical mechanical polishing(CMP), Chemical vapor deposition process, Germanium on insulators, Germanium-on-insulator, Metal semiconductor metal photodetector, Monolithic integration, Single-crystalline, Time-resolved photoluminescence, Germanium
Citation
Published Version (Please cite this version)