Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Date
2012-03-02
Advisor
Instructor
Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
Electronic ISSN
Publisher
Institute of Electrical and Electronics Engineers
Volume
33
Issue
4
Pages
579 - 581
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.

Course
Other identifiers
Book Title
Keywords
Area dependent, Germanium, Monolithic, Optoelectronics, Annealing cycles, Area dependent, High quality, Low defect densities, Metal-semiconductor-metal photodiodes, Monolithic, Multistep deposition, Root mean squares, Si substrates, Threading dislocation densities, Monolithic integrated circuits, Optoelectronic devices, Silicon, Silicon compounds, Silicon oxides, Surface roughness, Germanium
Citation
Published Version (Please cite this version)