Silicon-Germanium multi-quantum well photodetectors in the near infrared
Date
2012
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Source Title
Optics Express
Print ISSN
10944087
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Publisher
Optical Society of American (OSA)
Volume
20
Issue
7
Pages
7608 - 7615
Language
English
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Journal Title
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Abstract
Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America.
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Keywords
Epitaxial films , Epitaxial growth , Leakage currents , Monolithic integrated circuits , Single crystals , Applied voltages , Epitaxial techniques , Epitaxially grown , Growth techniques , High-quality films , Monolithic integration , Multiquantum wells , Near Infrared , P-i-n photodetectors , Responsivity , Reverse leakage current , Silicon Germanium , Silicon substrates , Spectral responsivity , VLSI technology , Photodetectors , germanium , silicon , article , chemistry , equipment , equipment design , infrared radiation , instrumentation , near infrared spectroscopy , photometry , radiation exposure , Equipment Design , Equipment Failure Analysis , Germanium , Infrared Rays , Photometry , Silicon , Spectroscopy, Near-Infrared