Browsing by Subject "InGaN/GaN"
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Item Open Access Analysis of the mosaic defects in graded and non graded InxGa1‐xN solar cell structures(Süleyman Demirel Üniversitesi, 2017) Kars Durukan, İ.; Öztürk, M. K.; Özçelik, S.; Özbay, EkmelIn this study, graded (A) InxGa1‐xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1‐xN (13.6 ≤ x ≤ 24.9) samples are grown on c‐oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X‐Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM (Full width at half maximum) value. From the PL measurements, it is observed that the GaN half‐width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher.Item Open Access Blue InGaN/GaN-based quantum electroabsorption modulators(IEEE, 2006) Sarı, Emre; Nizamoğlu, Sedat.; Özel, Tuncay; Demir, Hilmi VolkanWe introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ∼6000 cm-1 below the band edge at highly transmissive, blue region (at λ peak=424 nm) with a 6 V swing and emits blue light (at λpeak=440 nm) with an optical output power of 0.35 mW at a 20 mA current injection level. Unlike infrared III-V quantum modulators, this blue modulator shows a blue shift in its electroabsorption (for λ < 418 nm) with increasing applied field accross it, due to high alternating polarization fields in its quantum structures; this electroabsorption behavior is opposite to the conventional quantum confined Stark effect that features common red shift. This device holds great promise for > 10 GHz optical clock injection directly into silicon CMOS chips in the blue because of its low parasitic in-series resistance (< 100 Ω) and the possibility to make smaller device mesas for low capacitance (1.2 fF for a 10μm×10μm mesa size). Considering high-speed operation and high responsivity of silicon-on-insulator (SOI) photodetectors in the blue range, unlike in the infrared, this approach eliminates the need for on-chip hybrid integration of Si CMOS with III-V photodetectors. Furthermore, the efficient electroluminescence of this device makes it feasible to consider on-chip blue laser-modulator integration for a compact optical clocking scheme. © 2006 IEEE.Item Open Access Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures(IEEE, 2010) Sarı, Emre; Akyuz, Özgün; Choi, E. -G.; Lee I.-H.; Baek J.H.; Demir, Hilmi VolkanCrystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.Item Open Access Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures(IEEE, 2009) Sarı, Emre; Nizamoğlu, Sedat; Lee I.-H.; Baek J.-H.; Demir, Hilmi VolkanWe report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.Item Open Access Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields(American Institute of Physics, 2009-05-29) Sari, E.; Nizamoglu, S.; Lee, I. H.; Baek, J. H.; Demir, Hilmi VolkanElectric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.Item Open Access Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier(Optical Society of America, 2013) Ji Y.; Zhang, Z. -H.; Tan S.T.; Ju, Z. G.; Kyaw, Z.; Hasanov N.; Liu W.; Sun X. W.; Demir, Hilmi VolkanWe study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.Item Open Access Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures(SPIE, 2011) Jang L.-W.; Ju J.-W.; Jeon J.-W.; Jeon, D.-W.; Choi J.-H.; Lee, S.-J.; Jeon, S.-R.; Baek J.-H.; Sarı, Emre; Demir, Hilmi Volkan; Yoon H.-D.; Hwang, S.-M.; Lee I.-H.We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.Item Open Access Green/yellow solid state lighting via radiative and nonradiative energy transfer involving colloidal semiconductor nanocrystals(IEEE, 2009-08-05) Nizamoglu, S.; Sari, E.; Baek, J. H.; Lee, I. H; Demir, Hilmi VolkanLEDs made of In(x)Ga(1-x)N and (Al(x)Ga(1-x))(1-y)In(y)P suffer from significantly reduced quantum efficiency and luminous efficiency in the green/yellow spectral ranges. To address these problems, we present the design, growth, fabrication, hybridization, and characterization of proof-of-concept green/yellow hybrid LEDs that utilize radiative and nonradiative [Forster resonance energy transfer (FRET)] energy transfers in their colloidal semiconductor nanocrystals (NCs) integrated on near-UV LEDs. In our first NC-LED, we realize a color-converted LED that incorporate green-emitting CdSe/ZnS core/shell NCs (lambda(PL) = 548 nm) on near-UV InGaN/GaN LEDs (lambda(EL) = 379 nm). In our second NC-LED, we implement a color-converted FRET-enhanced LED. For that, we hybridize a custom-design assembly of cyan-and green-emitting CdSe/ZnS core/shell NCs (lambda(PL) = 490 and 548 nm) on near-UV LEDs. Using a proper mixture of differently sized NCs, we obtain a quantum efficiency enhancement of 9% by recycling trapped excitons via FRET. With FRET-NC-LEDs, we show that it is possible to obtain a luminous efficacy of 425 lm/W(opt) and a luminous efficiency of 94 lm/W, using near-UV LEDs with a 40% external quantum efficiency. Finally, we investigate FRET-converted light-emitting structures that use nonradiative energy transfer directly from epitaxial quantum wells to colloidal NCs. These proof-of-concept demonstrations show that FRET-based NC-LEDs hold promise for efficient solid-state lighting in green/yellow.Item Open Access Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer(Optical Society of American (OSA), 2013) Zhang, Z.-H.; Tan, S.T.; Liu W.; Ju, Z.; Zheng, K.; Kyaw, Z.; Ji, Y.; Hasanov, N.; Sun X.W.; Demir, Hilmi VolkanThis work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. © 2013 Optical Society of America.Item Open Access InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors(Academic Press, 2018) Sheremet, V.; Gheshlaghi, N.; Sözen, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.Item Open Access Novel hybrid light emitting diodes with multiple assemblies of nanocrystals to generate and tune white light(2007) Nizamoğlu, SedatToday approximately one third of the world population (about two billion people) in under-developed countries has no access to electricity and relies on unhealthy, costly and low-quality fuel-based lighting for home illumination. In the rest of the world, lighting consumes a large portion (20%) of the total electricity production, which significantly contributes to global warming problem. Also given limited resources, such large energy consumption needs to be reduced for sustainable economic growth. Solid state lighting provides remedy to these problems for the entire globe. Therefore, the advancement of white light emitting diodes (WLEDs) becomes a key point for development of human civilization. To this end, the strong demand for the development of high quality WLEDs around the globe motivates our research work on the investigation of white light generation with high color rendering index. In this thesis, we develop and demonstrate nanocrystal hybridized light emitting diodes with high color rendering index. By the hybridization of multiple layer-by-layer assemblies of CdSe/ZnS core-shell nanocrystals on blue and near ultraviolet (n-UV) InGaN/GaN light emitting diodes, we show white light generation with highly tunable optical properties such as tristimulus color coordinates, correlated color temperature, and color rendering index. Additionally, by using dual hybridization of nanocrystals in combination with conjugated polymers, we obtain white light sources with high color rendering indices exceeding the requirements of the future solid state lighting applications. In this thesis, we present design, growth, fabrication, experimental characterization and theoretical analysis of these hybrid white LEDs.Item Open Access P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas(2013) Zhang, Z.-H.; Tiam Tan, S.; Kyaw, Z.; Liu W.; Ji, Y.; Ju, Z.; Zhang X.; Wei Sun X.; Volkan Demir H.Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants. © 2013 AIP Publishing LLC.Item Open Access Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior(IEEE, 2010) Sarı, Emre; Nizamoğlu, Sedat; Choi J.H.; Lee, S.J.; Baik, K.H.; Lee I.H.; Baek J.H.; Hwang, S.-M.; Demir, Hilmi VolkanWe present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.Item Open Access Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction(Springer, 2009-04-18) Öztürk, M. K.; Hongbo, Y.; SarIkavak, B.; Korçak, S.; Özçelik, S.; Özbay, EkmelThe important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are determined by using nondestructive high-resolution X-ray diffraction in detail. The distorted GaN layers were described as mosaic crystals characterized by vertical and lateral coherence lengths, a mean tilt, twist, screw and edge type threading dislocation densities. The rocking curves of symmetric (00.l) reflections were used to determine the tilt angle, while the twist angle was an extrapolated grown ω-scan for an asymmetric (hk.l) Bragg reflection with an h or k nonzero. Moreover, it is an important result that the mosaic structure was analyzed from a different (10.l) crystal direction that was the angular inclined plane to the z-axis. The mosaic structure parameters were obtained in an approximately defined ratio depending on the inclination or polar angle of the sample.Item Open Access Tunable white light generating nanocyrstal-hybridized LEDs(IEEE, 2007) Demir, Hilmi Volkan; Nizamoğlu, SedatWe hybridize CdSe/ZnS core-shell nanocrystals on InGaN/GaN near-UV/blue LEDs to generate light widely tunable across the visible spectral range and within the white region of the chromaticity diagram with adjustable tristimulus coordinates. We present the design, growth, fabrication, and characterization of these nanocrystalhybridized LEDs. © 2007 Optical Society of America.Item Open Access Warm-white light-emitting diodes integrated with colloidal quantum dots for high luminous efficacy and color rendering(2010) Nizamoglu, S.; Erdem, T.; Sun X.W.; Demir, Hilmi VolkanWarm-white LEDs (WLEDs) with high spectral quality and efficiency are required for lighting applications, but current experimental performances are limited. We report on nanocrystal quantum dot (NQD) hybridized WLEDs with high performance that exhibit a high luminous efficacy of optical radiation exceeding 350 lm/Wopt and a high color rendering index close to 90 at a low correlated color temperature <3000 K. These spectrally engineered WLEDs are obtained using a combination of CdSe/ZnS core/shell NQD nanophosphors integrated on blue InGaN/GaN LEDs. © 2010 Optical Society of America.Item Open Access White light generation with CdSe/ZnS core-shell nanocrystals and InGaN/GaN light emitting diodes(IEEE, 2006) Nizamoğlu, Sedat; Özel, Sedat; Sarı, Emre; Demir, Hilmi VolkanWe present hybrid white light sources that integrate CdSe/ZnS core-shell nanocrystals on blue InGaN/GaN light emitting diodes (LED). We report on the demonstrations of white light generation using yellow nanocrystals (λPL=580 nm) hybridized on a blue LED (λEL= 440 nm) with tristimulus coordinates of x=0.37 and y=0.25, correlated color temperature of Tc=2692 K, and color rendering index of R a=14.6; cyan and red nanocrystals (λPL=500 nm and 620 nm) on a blue LED (λEL=440 nm) with x=0.37, y=0.28, T c=3246 K, and Ra=19.6; and green, yellow, and red nanocrystals (λPL=540 nm, 580 nm, and 620 nm) on a blue LED (λEL=452 nm) with x=0.30, y=0.28, Tc =7521 K, and Ra=40.9. © 2006 IEEE.