Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Date
2013
Advisor
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Source Title
Optics Express
Print ISSN
10944087
Electronic ISSN
Publisher
Optical Society of American (OSA)
Volume
21
Issue
4
Pages
4958 - 4969
Language
English
Type
Article
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Abstract

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. © 2013 Optical Society of America.

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Keywords
Gallium nitride, Built-in electric fields, Current spreading, Electrical performance, External quantum efficiency, InGaN/GaN, Ingan/gan lightemitting diodes (LEDs), Ionized donors, Optical output power, Theoretical study, Light emitting diodes, gallium, gallium nitride, indium, indium nitride, gallium, indium, chemistry, device failure analysis, devices, electric conductivity, equipment design, illumination, semiconductor, article, chemistry, equipment, equipment failure, illumination, Electric Conductivity, Equipment Design, Equipment Failure Analysis, Gallium, Indium, Lighting, Semiconductors, Electric Conductivity, Equipment Design, Equipment Failure Analysis, Gallium, Indium, Lighting, Semiconductors
Citation
Published Version (Please cite this version)