P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

Date
2013
Authors
Zhang, Z.-H.
Tiam Tan, S.
Kyaw, Z.
Liu W.
Ji, Y.
Ju, Z.
Zhang X.
Wei Sun X.
Volkan Demir H.
Advisor
Supervisor
Co-Advisor
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Instructor
Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
Publisher
Volume
103
Issue
26
Pages
Language
English
Type
Article
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Abstract

Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants. © 2013 AIP Publishing LLC.

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Keywords
Capacitance voltage measurements, InGaN/GaN, Ingan/gan leds, InGaN/GaN quantum well, Injected electrons, Mg dopants, P-doping, Radiative recombination, Gases, Metallorganic chemical vapor deposition, Light emitting diodes
Citation
Published Version (Please cite this version)