Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
Date
2010
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Abstract
Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.
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2010 23rd Annual Meeting of the IEEE Photonics Society
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IEEE
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Controlled growth, Crystal material, Dislocation densities, Epitaxial lateral overgrowth, High efficiency, High-quality materials, InGaN/GaN, Laser diodes, Light emitters, Quantum heterostructures, Quantum structure, Dislocations (crystals), Gallium alloys, Gallium nitride, Light emission, Light emitting diodes, Optoelectronic devices, Epitaxial growth
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English