Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields

Date
2009-05-29
Advisor
Instructor
Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
Publisher
American Institute of Physics
Volume
94
Issue
21
Pages
211107-1 - 211107-3
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.

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Book Title
Keywords
Applied electric field, Applied field, External electric field, Field dependence, InGaN/GaN, Internal quantum efficiency, Low field, Photoluminescence decay, Polarization field, Quantum heterostructures, Radiative decay, Radiative recombination, Time-resolved photoluminescence, Carrier lifetime, Crystals, Electric field measurement, Photoluminescence, Electric fields
Citation
Published Version (Please cite this version)