Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures

Date
2011
Advisor
Instructor
Source Title
Proceedings of SPIE
Print ISSN
0277-786X
Electronic ISSN
Publisher
SPIE
Volume
7945
Issue
Pages
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.

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Keywords
Blue light emitting diodes, Decay rate, Electroluminescence intensity, Electron hole pairs, Electron vibrations, Enhancement factor, Inductive coupled plasma, InGaN/GaN, Luminescence intensity, Multiple quantum wells, Optical characteristics, P-type GaN, Quantum well, Surface plasmon coupling, Surface plasmons, Time-resolved photoluminescence, Decay (organic), Energy transfer, Gallium nitride, Light, Light emission, Light emitting diodes, Nanophotonics, Nanostructures, Photoluminescence, Plasma etching, Plasmons, Semiconductor quantum wells, Water analysis, Silver
Citation
Published Version (Please cite this version)