Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures

Date
2009
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Source Title
2009 IEEE LEOS Annual Meeting Conference Proceedings
Print ISSN
1092-8081
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Publisher
IEEE
Volume
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Pages
606 - 607
Language
English
Type
Conference Paper
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Abstract

We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.

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Keywords
Barrier layers, C-plane sapphire substrates, Electric field dependence, Electrostatic field, External electric field, Fabricated device, Fermi's Golden Rule, Indium tin oxide, InGaN/GaN, Metallizations, Metalorganic chemical vapor deposition, Order of magnitude, PiN diode, Quantum heterostructures, Quantum well, Radiative recombination, Recombination lifetime, Semitransparent contacts, Simulation result, Standard photolithography, Corundum, Crystals, Electric field measurement, Electric fields, Gallium nitride, Metallorganic chemical vapor deposition, Organic chemicals, Reactive ion etching, Semiconducting gallium, Tin, Transfer matrix method, Gallium alloys
Citation
Published Version (Please cite this version)