Browsing by Author "Dâna, A."

Now showing 1 - 18 of 18

Open Access
Charge retention in quantized energy levels of nanocrystals
(Elsevier B.V., 2007) Dâna, A.; Akça, I.; Ergun, O.; Aydınlı, Atilla; Turan, R.; Finstad, T. G.
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs.
Open Access
Charging / discharging of thin PS / PMMA films as probed by dynamic x-ray photoelectron spectroscopy
(2007) Sezen, H.; Ertas, G.; Dâna, A.; Süzer, Şefik
Polystyrene / polymethyl methacrylate (PS-PMMA) thin films were analyzed for detecting phase separation as well as probing their electrical responses by XPS. It was also shown that electrical parameters like resistance or capacitance can also be extracted using dynamical XPS measurements. A Kratos ES300 electron spectrometer was used for XPS measurements, and a nearby filament provided low-energy electrons for charge neutralization. The results show that under a positive stress, low-energy electrons are attracted to the sample and yield less positive charge on the sample, due to partial neutralization.
Open Access
Chemically specific dynamic characterization of photovoltaic and photoconductivity effects of surface nanostructures
(American Chemical Society, 2010) Ekiz, O. Ö.; Mizrak, K.; Dâna, A.
We report characterization of photovoltaic and photoconductivity effects on nanostructured surfaces through light induced changes in the X-ray photoelectron spectra (XPS). The technique combines the chemical specificity of XPS and the power of surface photovoltage spectroscopy (SPV), with the addition of the ability to characterize photoconductivity under both static and dynamic optical excitation. A theoretical model that quantitatively describes the features of the observed spectra is presented. We demonstrate the applicability of the model on a multitude of sample systems, including homo- and heterojunction solar cells, CdS nanoparticles on metallic or semiconducting substrates, and carbon nanotube films on silicon substrates.
Open Access
Differentiation of domains in composite surface structures by charge-contrast x-ray photoelectron spectroscopy
(2007) Süzer, Şefik; Dâna, A.; Ertas, G.
An external bias is applied to two samples containing composite surface structures, while recording an XPS spectrum. Altering the polarity of the bias affects the extent of differential charging in domains that are chemically or electronically different to create a charge contrast. By utilizing this charge contrast, we show that two distinct silicon nitride and silicon oxynitride domains are present in one of the composite samples. Similarly, we use this technique to show that titanium oxide and silicon oxide domains exist as separate chemical entities in another composite sample. © 2007 American Chemical Society.
Open Access
An elastomeric grating coupler
(IOP Institute of Physics, 2006) Kocabas, A.; Ay, F.; Dâna, A.; Aydınlı, Atilla
We report on a novel nondestructive and reversible method for coupling free space light to planar optical waveguides. In this method, an elastomeric grating is used to produce an effective refractive index modulation on the surface of the optical waveguide. The external elastomeric grating binds to the surface of the waveguide with van der Waals forces and makes conformal contact without any applied pressure. As a demonstration of the feasibility of the approach, we use it to measure the refractive index of a silicon oxynitride film. This technique is nondestructive, reversible, low cost and can easily be applied to the characterization of optical materials for integrated optics. © 2006 IOP Publishing Ltd.
Open Access
Electrochemically tunable ultrafast optical response of graphene oxide
(A I P Publishing LLC, 2011) Kürüm, U.; Ekiz, O. Ö.; Yaglioglu, H. G.; Elmali, A.; Ürel, M.; Güner, H.; Mızrak, A. K.; Ortaç, B.; Dâna, A.
We demonstrate reversible and irreversible changes in the ultrafast optical response of multilayer graphene oxide thin films upon electrical and optical stimulus. The reversible effects are due to electrochemical modification of graphene oxide, which allows tuning of the optical response by externally applied bias. Increasing the degree of reduction in graphene oxide causes excited state absorption to gradually switch to saturable absorption for shorter probe wavelengths. Spectral and temporal properties as well as the sign of the ultrafast response can be tuned either by changing the applied bias or exposing to high intensity femtosecond pulses. © 2011 American Institute of Physics.
Open Access
Electrostatic force spectroscopy of near surface localized states
(Institute of Physics Publishing Ltd., 2005) Dâna, A.; Yamamoto, Y.
Electrostatic force microscopy at cryogenic temperatures is used to probe the electrostatic interaction of a conductive atomic force microscopy tip and electronic charges trapped in localized states in an insulating layer on a semiconductor. Measurement of the frequency shift of the cantilever as a function of tip-sample bias voltage shows discrete peaks at certain voltages when the tip is located near trap centres. These discrete changes in frequency are attributed to one by one filling of individual electronic states when the quantized energies traverse the substrate conduction band Fermi energy as the tip-sample voltage is increased. Theoretical analysis of the experiment suggests that such a measurement of the cantilever frequency shift as a function of bias voltage can be interpreted as an AC force measurement, from which spectroscopic information about the location and energy of localized states can be deduced. Experimental results from the study of a sample with InAs quantum dots as trap centres are presented.
Open Access
Excitation of a surface plasmon with an elastomeric grating
(American Institute of Physics, 2005) Kocabas, A.; Dâna, A.; Aydınlı, Atilla
We report on a new method to excite surface plasmon polaritons on a thin metal slab surface using an elastomeric grating which is fabricated by replica molding technique. The grating is placed on the metal surface which creates a periodic perturbation on the surface matching the momentum of the incident light to that of the surface plasmon. The conformal contact between the metal surface and the elastomeric grating changes the dielectric medium periodically and allows the observation of an effective surface plasmon polariton at the metal-air and metal-polymer interfaces of the grating. To clarify the nature of the observed plasmon, comparison of the elastomeric grating with elastomeric slabs was performed with the attenuated total reflection method.
Open Access
A figure of merit for optimization of nanocrystal flash memory design
(2008) Dâna, A.; Akca, I.; Aydınlı, Atilla; Turan, R.; Finstad, T. G.
Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel dielectric properties. The performance of a nanocrystal memory device can be expressed in terms of write/erase speed, carrier retention time and cycling durability. We present a model that describes the charge/discharge dynamics of nanocrystal flash memories and calculate the effect of nanocrystal, gate, tunnel dielectric and substrate properties on device performance. The model assumes charge storage in quantized energy levels of nanocrystals. Effect of temperature is included implicitly in the model through perturbation of the substrate minority carrier concentration and Fermi level. Because a large number of variables affect these performance measures, in order to compare various designs, a figure of merit that measures the device performance in terms of design parameters is defined as a function of write/erase/discharge times which are calculated using the theoretical model. The effects of nanocrystal size and density, gate work function, substrate doping, control and tunnel dielectric properties and device geometry on the device performance are evaluated through the figure of merit. Experimental data showing agreement of the theoretical model with the measurement results are presented for devices that has PECVD grown germanium nanocrystals as the storage media. Copyright
Open Access
Grating coupler integrated photodiodes for plasmon resonance based sensing
(Royal Society of Chemistry, 2011) Turker, B.; Guner, H.; Ayas S.; Ekiz, O. O.; Acar, H.; Güler, Mustafa O.; Dâna, A.
In this work, we demonstrate an integrated sensor combining a grating-coupled plasmon resonance surface with a planar photodiode. Plasmon enhanced transmission is employed as a sensitive refractive index (RI) sensing mechanism. Enhanced transmission of light is monitored via the integrated photodiode by tuning the angle of incidence of a collimated beam near the sharp plasmon resonance condition. Slight changes of the effective refractive index (RI) shift the resonance angle, resulting in a change in the photocurrent. Owing to the planar sensing mechanism, the design permits a high areal density of sensing spots. In the design, absence of holes that facilitate resonant transmission of light, allows an easy-to-implement fabrication procedure and relative insensitivity to fabrication errors. Theoretical and experimental results agree well. An equivalent long-term RI noise of 6.3 × 10 -6 is obtained by using an 8 mW He-Ne laser, compared to a shot-noise limited theoretical sensitivity of 5.61 × 10-9. The device features full benefits of grating-coupled plasmon resonance, such as enhancement of sensitivity for non-zero azimuthal angle of incidence. Further sensitivity enhancement using balanced detection and optimal plasmon coupling conditions are discussed. © 2011 The Royal Society of Chemistry.
Open Access
Lineshapes, shifts and broadenings in dynamical X-ray photoelectron spectroscopy
(2009) Dâna, A.
We describe in detail a model that can be used to estimate the X-ray photoelectron spectroscopic data of surfaces when a time varying bias or a modulation of the electrical properties of the surface is applied by external stimulation, in the presence of a neutralizing electron beam. Using the model and spectra recorded under periodic sample bias modulation, certain electronic properties related to charging dynamics of the surface can be estimated. The resulting technique is a non-contact impedance measurement technique with chemical specificity. Typical behavior of spectra under a square wave bias is given. Alternative modulation schemes are investigated, including small-signal square wave modulation, sinusoidal modulation and modulation of sample resistivity under fixed bias. © 2009 Elsevier B.V. All rights reserved.
Open Access
Parametrically coupled multiharmonic force imaging
(AIP Publishing, 2008) Abak, M. K.; Aktas, O.; Mammadov R.; Gürsel, I.; Dâna, A.
We report use of nonlinear tip-sample interactions to parametrically convert the frequency components of periodic tip-sample interaction forces to frequencies where they can be resonantly detected. One flexural mode of a cantilever is used for tapping-mode imaging and another flexural mode is used for detection of forces converted in presence of an externally injected mechanical oscillation at the difference frequency of the detecting mode and a harmonic of the tapping mode. Material contrast in attractive and repulsive regimes are demonstrated on samples with polymethyl methacrylate patterns and with deoxyribonucleic acid strands on silicon. © 2008 American Institute of Physics.
Open Access
Raman enhancement on a broadband meta-surface
(American Chemical Society, 2012-07-30) Ayas S.; Güner, H.; Türker, B.; Ekiz, O. O.; Dirisaglik, F.; Okyay, Ali Kemal; Dâna, A.
Plasmonic metamaterials allow confinement of light to deep subwavelength dimensions, while allowing for the tailoring of dispersion and electromagnetic mode density to enhance specific photonic properties. Optical resonances of plasmonic molecules have been extensively investigated; however, benefits of strong coupling of dimers have been overlooked. Here, we construct a plasmonic meta-surface through coupling of diatomic plasmonic molecules which contain a heavy and light meta-atom. Presence and coupling of two distinct types of localized modes in the plasmonic molecule allow formation and engineering of a rich band structure in a seemingly simple and common geometry, resulting in a broadband and quasi-omni-directional meta-surface. Surface-enhanced Raman scattering benefits from the simultaneous presence of plasmonic resonances at the excitation and scattering frequencies, and by proper design of the band structure to satisfy this condition, highly repeatable and spatially uniform Raman enhancement is demonstrated. On the basis of calculations of the field enhancement distribution within a unit cell, spatial uniformity of the enhancement at the nanoscale is discussed. Raman scattering constitutes an example of nonlinear optical processes, where the wavelength conversion during scattering may be viewed as a photonic transition between the bands of the meta-material.
Open Access
Reversible electrical reduction and oxidation of graphene oxide
(American Chemical Society, 2011) Ekiz, O. O.; Ürel, M.; Güner, H.; Mizrak, A. K.; Dâna, A.
We demonstrate that graphene oxide can be reversibly reduced and oxidized using electrical stimulus. Controlled reduction and oxidation in two-terminal devices containing multilayer graphene oxide films are shown to result in switching between partially reduced graphene oxide and graphene, a process which modifies the electronic and optical properties. High-resolution tunneling current and electrostatic force imaging reveal that graphene oxide islands are formed on multilayer graphene, turning graphene into a self-assembled heterostructure random nanomesh. Charge storage and resistive switching behavior is observed in two-terminal devices made of multilayer graphene oxide films, correlated with electrochromic effects. Tip-induced reduction and oxidation are also demonstrated. Results are discussed in terms of thermodynamics of oxidation and reduction reactions. © 2011 American Chemical Society.
Open Access
Two-dimensional x-ray photoelectron spectroscopy for composite surface analysis
(2008) Süzer, Şefik; Sezen, H.; Dâna, A.
We describe a method for obtaining two-dimensional X-ray photoelectron spectroscopic data derived from the frequency dependence of the XPS peaks recorded under electrical square-wave pulses, which control and affect the binding energy positions via the electrical potentials developed as a result of charging. By using cross-correlations between various peaks, our technique enables us to elucidate electrical characteristics of surface structures of composite samples and bring out various correlations between hidden/overlapping peaks. © 2008 American Chemical Society.
Open Access
Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
(Elsevier, 2018) Orak, I.; Eren, Hamit; Bıyıklı, N.; Dâna, A.
In this study, a methodology for producing highly controlled and uniformly dispersed metal nanoparticles were developed by atomic layer deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM) cells and their applications were demonstrated with ultra-small platinum nanoparticles (Pt-NPs) as charge trapping layer and control tunnel oxide layer. The ultra-small Pt-NPs possessed sizes ranging from 2.3 to 2.6 nm and particle densities of about 2.5 × 1013 cm–b. The effect of Pt-NPs embedded on the storage layer for charging was investigated. The charging effect of ultra-small Pt-NPs the storage layer was observed using the electrical characteristics of TFFM. The Pt-NPs were observed by a high-resolution scanning electron microscopy (HR-SEM). The memory effect was manifested by hysteresis in the IDS-VDS and IDS-VGS curves. The charge storage capacity of the TFFM cells demonstrated that ALD-grown Pt-NPs in conjunction with ZnO layer can be considered as a promising candidate for memory devices. Moreover, ZnO TFFM showed a ION/IOFF ratio of up to 52 orders of magnitude and its threshold voltage (Vth) was approximately −4.1 V using Ids−a/b – Vgs curve. Fabricated TFFMs exhibited clear pinch-off and show n-type field effect transistor (FET) behavior. The role of atomic-scale controlled Pt-NPs for improvement of devices were also discussed and they indicated that ALD-grown Pt-NPs can be utilized in nanoscale electronic devices as alternative quantum dot structures.
Open Access
X-ray photoemission for probing charging/discharging dynamics
(American Chemical Society, 2006) Süzer, Şefik; Dâna, A.
A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to ± 10.0 V square-wave pulses with varying frequencies in the range of 10-3 to 103 Hz. For a clean silicon sample, the Si2p(Si0) peak appears at correspondingly -10.0 eV and +10.0 eV binding energy positions (20.0 eV difference) with no frequency dependence. However, the corresponding peak of the oxide (Si4+) appears with less than 20.0 eV difference and exhibits a strong frequency dependence due to charging of the oxide layer, which is faithfully reproduced by a theoretical model. In the simplest application of this technique, we show that the two O1s components can be assigned to SiOx and TiO y moeties by correlating their dynamical shifts to those of the Si2p and Ti2p peaks in a composite sample. Our pulsing technique turns the powerful X-ray photoemission into an even more powerful impedance spectrometer with an added advantage of chemical resolution and specificity. © 2006 American Chemical Society.
Open Access
XPS measurements for probing dynamics of charging
(Elsevier, 2010) Süzer, Şefik; Sezen, H.; Ertas, G.; Dâna, A.
The technique of recording X-ray photoemission data while the sample rod is subjected to ±10.0 V (dc) or square-wave pulses (ac) with varying frequencies in the range of 10-3 to 103 Hz for probing charging/discharging dynamics of dielectric materials, is reviewed. Application of this technique introduces charging shifts as well as broadening of the peaks, which depend non-linearly on the polarity, as well as on the frequency of the pulses applied. These changes have been measured on: (i) an artificially created dielectric sample consisting of a Au metal strip connected externally to a series resistor of 1 MΩ and a parallel capacitor of 56 nF, and two real dielectric films; (ii) a 20 nm organic polystyrene film spin-coated on a silicon substrate; (iii) a 10 nm SiO2 inorganic layer thermally grown on silicon. A simple circuit model is introduced to simulate the charging shifts and the peak broadenings. Although this simple model faithfully reproduces the charging shifts in all three cases, and also some of the broadenings for the artificial dielectric and the polystyrene film, the additional broadening in the negatively charged peaks of the SiO2 dielectric film cannot be accounted for. It is also claimed that these experimental findings can be used for extracting material-specific dielectric properties.