Charge retention in quantized energy levels of nanocrystals
Date
2007
Authors
Dâna, A.
Akça, I.
Ergun, O.
Aydınlı, Atilla
Turan, R.
Finstad, T. G.
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Abstract
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs.
Source Title
Physica E : Low-Dimensional Systems and Nanostructures
Publisher
Elsevier B.V.
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Keywords
Carrier storage, Charge retention, Nanocrystals, Capacitance, Data storage equipment, Ground state, Mathematical models, Optimization, Plasma enhanced chemical vapor deposition, Capacitance spectroscopy, Carrier storages, Charge retention, Quantized energy levels, Nanocrystals
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Language
English
Type
Article