Nanotechnology Research Center (NANOTAM)

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Open Access
1018 nm Yb-doped high-power fiber laser pumped by broadband pump sources around 915 nm with output power above 100 W
(OSA - The Optical Society, 2017) Midilli, Y.; Efunbajo, O. B.; Şimşek, B.; Ortaç, B.
We demonstrate a 1018 nm ytterbium-doped all-fiber laser pumped by tunable pump sources operating in the broad absorption spectrum around 915 nm. In the experiment, two different pump diodes were tested to pump over a wide spectrum ranging from 904 to 924 nm by altering the cooling temperature of the pump diodes. Across this so-called pump wavelength regime having a 20 nm wavelength span, the amplified stimulated emission (ASE) suppression of the resulting laser was generally around 35 dB, showing good suppression ratio. Comparisons to the conventional 976 nm-pumped 1018 nm ytterbium-doped fiber laser were also addressed in this study. Finally, we have tested this system for high power experimentation and obtained 67% maximum optical-to-optical efficiency at an approximately 110 W output power level. To the best of our knowledge, this is the first 1018 nm ytterbium-doped all-fiber laser pumped by tunable pump sources around 915 nm reported in detail.
Open Access
[2+2] cycloadditions of sorbyl tosylate with imines/1-azadienes: a one-pot domino approach for α-alkylidene-β-lactams and their computational studies and antimicrobial evaluation
(Wiley-Blackwell, 2018) Kumar, Y.; Bedi, P. M. S.; Singh, P.; Adeniyi, A. A.; Singh-Pillay, A.; Singh, P.; Bhargava, G.
The manuscript describes a straightforward and atom-efficient method for the synthesis of α-alkylidene-β-lactams using sorbyl tosylate and imines/1-azadienes at high temperature (80 °C). The Density functional theory calculations have shown the prevalence of the first order kinetics in these [2+2] cycloadditions to produce mixture of 3-butadienyl-azetidin-2ones and 3-but-2-enylidene-azetidin-2-ones in good yields. The 3-but-2-enylidene-azetidin-2-ones have also shown antimicrobial activity against the E. coli, S. aureus, P. aeruginosa, B. cereus and B. subtilis.
Open Access
21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode
(Institute of Electrical and Electronics Engineers, 2022-11-09) Çiçek, O.; Arslan, E.; Altındal, Ş.; Badali, Y.; Özbay, Ekmel
Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance–voltage ( Cm – V ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.
Open Access
2D anisotropic photonic crystals of hollow semiconductor nanorod with liquid crystals
(2013) Karaomerlioglu F.; Şimsek, Şevket; Mamedov, Amirullah M.; Özbay, Ekmel
Photonic crystals (PCs) have many applications in order to control light-wave propagation. A novel type of two-dimensional anisotropic PC is investigated band gap and optical properties as a hollow semiconductor nanorod with nematicliquid crystals (LC). The PC structure composed of an anisotropic nematicLC in semiconductor square hollow nanorod is designed using the plane wave expansion (PWE) method and finite-difference time-domain (FDTD) method. It has been used 5CB (4-pentyl-4'-cyanobiphenyl) as LC core, and Tellurium (Te) as square hollow nanorod material.The PC with hollow Tenanorod with nematicLC is compared with the PC with solid Tenanorodand the PC with hollow Tenanorod. © (2013) Trans Tech Publications, Switzerland.
Open Access
3D-printed, implantable alginate/CuS nanoparticle scaffolds for local tumor treatment via synergistic photothermal, photodynamic, and chemodynamic therapy
(American Chemical Society, 2023-09-08) Çolak, B.; Cihan, M. C.; Ertaş, Yavuz Nuri
A promising method for treating cancer is localized therapy, which mainly employs hydrogel-based delivery systems. Recently, the capability of 3D printing techniques has been revealed as a promising tool to tackle cancer. In this work, alginate (Alg)-based 3D-printed implantable scaffolds containing bovine serum albumin (BSA)-coated copper sulfide (CuS) nanoparticles, Alg-CuS/BSA, were fabricated for local breast cancer therapy and applied to inhibit tumor development through utilizing synergistic photothermal, photodynamic, and chemodynamic effects. The Alg-CuS/BSA scaffolds were flexible; however, their modulus was significantly lower than that of human breast tissues. Under 808 nm irradiation, the scaffolds demonstrated efficient photothermal, photodynamic, and chemodynamic effects both in vitro and in vivo via improving photothermal transduction and singlet-oxygen formation, and also as Fenton catalysts, the scaffolds produced hydroxyl radicals in the presence of H2O2 within the tumor microenvironment. Without the use of conventional anticancer drugs, the promising tumor treatment of implanted scaffolds can offer potential applications in local cancer treatment and prevent metastasis after surgical removal of tumors.
Open Access
A [5]Rotaxane-Based photosensitizer for photodynamic therapy
(WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 2019) Özkan, Melis; Keser, Yağmur; Hadi, Seyed Ehsan; Tuncel, Dönüş
A [5]rotaxane was synthesized through a catalytically self‐threading reaction in which CB6 serves as a macrocycle and acts as a catalyst for the 1,3‐dipolar cycloaddition reaction between the alkyne substituted porphyrin core and azide functionalized stopper groups by forming triazole. Application of this rotaxane as a photosensitizer in photodynamic therapy against cancer cells and in bacteria inactivation have also been demonstrated. This photosensitizer has an excellent water solubility and remains stable in biological media at physiological pH (7.4) for prolonged times. It has the ability to generate singlet oxygen efficiently; while it shows no dark cytotoxicity up to 300 µm to the MCF7 cancer cell line, it is photocytotoxic even at 2 µm and reduces the cell viability to around 70 % when exposed to white light. It also displays light‐triggered biocidal activity both against gram‐negative bacteria (Escherichia coli, E. coli) and gram‐positive bacteria (Bacillus subtilis). Upon white light irradiation for 1 min with a flux of 22 mW/cm2 of E. coli suspension incubated with [5]rotaxane (3.5 µm), a killing efficiency of 96 % is achieved, whereas in the dark the effect is recorded as only around 9 %.
Open Access
A 6-18 GHz GaN power amplifier MMIC with high gain and high output power density
(IEEE, 2019) Sütbaş, Batuhan; Özipek, Ulaş; Gürdal, A.; Özbay, Ekmel
A three-stage reactively-matched 6-18 GHz power amplifier MMIC design is presented. The design effort is focused on obtaining a low-loss output matching network for a high output power density. Active unit cells consist of an 8×125 μm transistor stabilized with a symmetrical parallel RC circuit. The wideband amplifier is fabricated using our in-house 0.25 μm GaN on SiC HEMT process. The fabrication technology details and overall device performance are reported. Experimental results show that the MMIC has a minimum gain of 22 dB and a maximum gain of 26.5 dB across the operation band. An average output power density higher than 3.3W/mm with an associated average power-added efficiency of 22.5% is achieved. The MMIC demonstrates output power greater than 9.5 W at the center frequency. This design is distinguished from recent studies with its low-ripple high gain and high output power density.
Open Access
60W stacked-HEMT based asymmetric X-band GaN SPDT switch for single chip T/R modules
(IEEE - Institute of Electrical and Electronics Engineers, 2023-10-25) Ertürk, Volkan; Gürdal, Armağan; Çankaya Akoğlu, Büşra; Özbay, Ekmel
This paper presents a high-power, asymmetric single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch using high electron mobility transistors (HEMT) with AlGaN/GaN technology for single chip X-band T/R modules. The SPDT switch is designed in series-shunt topology for high-power handling and low-loss performance. For high-power handling, shunt-stacked HEMTs on the transmit (Tx) path and series-stacked HEMTs on the receive (Rx) path are used. In its Tx mode, the switch has achieved an insertion loss better than 0.75 dB throughout the 6-13 GHz bandwidth with a return loss of 14 dB and an isolation of 28 dB. It can handle more than 60 W RF input power at 0.1 dB compression. In its Rx mode, the switch can receive signals with an insertion loss lower than 1.15 dB with 14 dB return loss and 19 dB isolation. With its low insertion and high-power handling capacity from C-band to Ku-band, this switch shows state-of-the-art performance for communication systems.
Open Access
6th International Conference on Competitive Materials and Technology Processes and 2nd European Conference on Silicon and Silica Based Materials
(Institute of Physics, 2022) Whittingham, M. Stanley; Kulkov, Sergey N.; Beck, Uwe; Sekino, Tohru; Eshtiaghi, Nicky; Fiore, Saverio; Sadowski, Tomasz; Yang, Jun; Nagasawa, Shigeru; Contreras Garcia, M.E.; Srdic, Vladimir V.; Mamedov, Amirullah M.; Itatani, Kiyoshi; Stupina, Alena; Lecomte-Nana, Gizéle; Kotova, Olga; Rauwel, Erwan; Chen, Soo; Urakov, Aleksandr; Gömze, Ludmila; Kovács, A. Tünde; Jeon, Jae-Ho; Avetissov, Igor; Toyama, Takeshi; Panesar, Daman; Mori, Takao; Chemam, Abdelbaki; Ewais, Emad; Nguyen, Quang Chinh; Kocserha, A. István; Khramchenkov, Maxim; Kurovics, Emese; Knyazeva, Anna; Arinstein, Arkadi; Bursikova, Vilma; Shevchenko, Vladimir; Gömze, László A.; Iwayama, Tsutomu; Mahnicka-Goremikina, Ludmila; Chang, Jeong-Ho; Pytel, Zdzislaw; Hussainova, Irina; Kocserha, István; Amato, Rosaria D.; Ibrahim, Jamal Eldin F.M.; Mezinskis, Gundars; Sedlacik, Michal; Lederer, Gr. Martin; Krenek, Tomas
The aims of the 2nd European Conference on Silicon and Silica Based Materials (ec-siliconf2) and the 6th International Conference on Competitive Materials and Technology Processes (ic-cmtp6) are the followings: • Promote new methods and results of scientific research in the fields of material, chemical, physical, biological, environmental, healts as well as processing and technology sciences. • Change information between the theoretical and applied sciences and promote their technical and technological implantations. • Improve the communication between the scientist of different nations, countries, and continents. Among the major fields of interest are traditional and advanced materials with increased physical, chemical, biological, medical, thermal and mechanical properties, including their crystalline and nano-structures, phase transformations as well as methods of their technological processes, tests and measurements. Multidisciplinary applications of material science and technological problems encountered in sectors like metallic and non-metallic materials and composites, including metal-alloys, ceramics, polymers, glasses, thin films, etc. Mashinery, IT tools, aerospace, automotive and marine industry, electronics, energy, construction materials, medicine, biosciences, and environmental sciences are of particular interest. List of The International Scientific Advisory Board (ISAB), The International Organizing committee (IOC), The International Scientific Advisory Board (ISAB), The International Organizing committee (IOC), The Session of ic-cmtp6, The Session of ec-siliconf2 and Acknowledgement are available in this pdf.
Open Access
915 nm pumped 1018 nm Yb-doped all-fiber high power fiber laser system
(Institute of Electrical and Electronics Engineers Inc., 2019) Midilli, Yakup; Efunbajo, O. Benjamin; Şimşek, Bartu; Ortaç, Bülend
Fibers lasers have attracted great attention in the last decades and the power scaling has reached tens of kW levels. Especially with the tandem pump configuration, pumping the active medium with a pump laser light instead of a diode laser, has made a breakthrough and so many research has been conducted about 1018 nm fiber laser systems [1]. Decreasing the quantum defect, the slope efficiency could be increased up to 90 % levels; on the other hand, due to the emission cross section of the Ytterbium (Yb), to operate the laser in the 1018 nm wavelength region is very challenging because of the presence of the ASE about the 1030 nm region. However, in the literature by using 976 nm pump diodes multi-hundred watts level 1018 nm fiber lasers could be demonstrated [2, 3].
Open Access
94.8 km-range direct detection fiber optic distributed acoustic sensor
(Optical Society of America(OSA), 2019) Uyar, Faruk; Uyar, Talha; Ünal, Canberk; Kartaloğlu, Tolga; Özdur, İbrahim; Özbay, Ekmel
This work demonstrates an ultra-long range direct detection fiber optic distributed acoustic sensor which can detect vibrations at a distance of 94.8 km with 10 m resolution along the sensing fiber.
Open Access
97 percent light absorption in an ultrabroadband frequency range utilizing an ultrathin metal layer: randomly oriented, densely packed dielectric nanowires as an excellent light trapping scaffold
(Royal Society of Chemistry, 2017) Ghobadi, A.; Dereshgi, S. A.; Hajian, H.; Birant, G.; Butun, B.; Bek, A.; Özbay, Ekmel
In this paper, we propose a facile and large scale compatible design to obtain perfect ultrabroadband light absorption using metal-dielectric core-shell nanowires. The design consists of atomic layer deposited (ALD) Pt metal uniformly wrapped around hydrothermally grown titanium dioxide (TiO2) nanowires. It is found that the randomly oriented dense TiO2 nanowires can impose excellent light trapping properties where the existence of an ultrathin Pt layer (with a thickness of 10 nm) can absorb the light in an ultrabroadband frequency range with an amount near unity. Throughout this study, we first investigate the formation of resonant modes in the metallic nanowires. Our findings prove that a nanowire structure can support multiple longitudinal localized surface plasmons (LSPs) along its axis together with transverse resonance modes. Our investigations showed that the spectral position of these resonance peaks can be tuned with the length, radius, and orientation of the nanowire. Therefore, TiO2 random nanowires can contain all of these features simultaneously in which the superposition of responses for these different geometries leads to a flat perfect light absorption. The obtained results demonstrate that taking unique advantages of the ALD method, together with excellent light trapping of chemically synthesized nanowires, a perfect, bifacial, wide angle, and large scale compatible absorber can be made where an excellent performance is achieved while using less materials.
Open Access
A high-power and broadband gan spdt mmic switch using gate-optimized hemts
(Institute of Electrical and Electronics Engineers, 2022-05-22) Erturk, V.; Gurdal, A.; Özbay, Ekmel
A high-power, broadband monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch is designed with gate-optimized high-electron-mobility transistors (HEMTs) using AlGaN/Gallium nitride (GaN) technology. The foot length of the gate is varied from 200 to 250 nm, and the head length is varied from 500 to 750 nm in the T-gate structure to optimize the radio frequency (RF) performance. The SPDT switch is designed in a series-shunt-shunt topology using gate topology as a design parameter. The switch has achieved an insertion loss better than 0.75 dB throughout the 3.5-13.5-GHz bandwidth. It can transmit 30-W output power at 0.1-dB compression point and handle 47.5-dBm input power at P-1dB. The isolation is above 25 dB, and the return loss is better than 11 dB. With its low insertion and high power-handling capacity in broadband, the SPDT switch shows state-of-the-art performance for high-power communication systems and radar applications.
Open Access
Ab initio modeling of elastic and optical properties of Sb and Bi sesquioxides
(Institute of Physics Publishing, 2018) Koc, H.; Akhundov, C. G.; Mamedov, Amirullah M.; Özbay, Ekmel
First-principle calculations performed the structural, mechanical, electronic, and optical properties of Sb2O3 and Bi2O3 compounds in monoclinic (claudetite and α-Bi2O3) and orthorhombic (valentinite) structures. Local density approximation has been used for modeling exchange-correlation effects. The lattice parameters, bulk modulus, and the first derivate of bulk modulus (to fit to the Murnaghan's equation of state) of considered compounds have been calculated. The second-order elastic constants have been calculated, and the other related quantities have also been estimated in the present work. The electronic bands structures and the partial densities of states corresponding to the band structures are presented and analyzed. The real and imaginary parts of dielectric functions and energy-loss function are calculated. Our structural estimation and some other results are in agreement with the available experimental and theoretical data.
Open Access
Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements
(Elsevier, 2019) Narin, P.; Abbas, J. M.; Atmaca, G.; Kutlu, E.; Lisesivdin, S. B.; Özbay, Ekmel
In this study, electronic properties of graphene nanoribbons with armchair edges (AGNRs) have been investigated with Density Functional Theory (DFT). Effects of heavy metal (HM) elements, including Zinc (Zn), Cadmium (Cd) and Mercury (Hg) atoms on electronic behavior of AGNRs have been calculated by passivating for both one and two edges of AGNRs in detail. To explain the electronic behavior of investigated AGNRs, the electronic band structure, the density of states (DOS), total energy have been calculated. Energetically favorable structures have been determined using calculated binding energy values. The obtained bandgap values of investigated structures changes between 0.30 and 0.64 eV. Increasing atomic number of passivation atoms have led to an increment in the bandgap of AGNRs.
Open Access
Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons
(Taylor and Francis, 2012) Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.; Özbay, Ekmel
We investigate the effects of ruthenium (Ru) termination and Ru doping on the electronic properties of armchair graphene nanoribbons (AGNRs) using first-principles methods. The electronic band structures, geometries, density of states, binding energies, band gap information, and formation energies of related structures are calculated. It is well founded that the electronic properties of the investigated AGNRs are highly influenced by Ru termination and Ru doping. With Ru termination, metallic band structures with quasi-zero-dimensional, one-dimensional and quasi-one-dimensional density of states (DOS) behavior are obtained in addition to dominant one-dimensional behavior. In contrast to Ru termination, Ru doping introduces small but measurable (12.4 to 89.6meV) direct or indirect band gaps. These results may present an additional way to produce tunable band gaps in AGNRs.
Open Access
Absorption enhancement in InGaN-based photonic crystal-implemented solar cells
(SPIE, 2012-07-26) Gundogdu, T. F.; Gokkavas, M.; Özbay, Ekmel
We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized. (c) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JNP.6.061603]
Open Access
Accurate and process-tolerant resistive load
(IEEE, 2020) Sütbaş, Batuhan; Özbay, Ekmel; Atalar, Abdullah
Resistive terminations cannot preserve high-quality matching at high frequencies due to the parasitic effects of the nonideal resistor. Moreover, resistance values of the termination resistors in integrated circuits are subject to process variations. Therefore, it is difficult to obtain accurate and process-tolerant terminations that are crucial for high performance in microwave circuits. We propose a new resistive network that compensates for the high-frequency parasitic effects of the resistors to improve the bandwidth of the termination. In addition to maintaining accuracy, the presented network provides tolerance to variation in the resistor values. The accuracy and tolerance of the proposed structure is analytically shown and experimentally verified by three test structures at the X-band fabricated on a GaN technology. The experimental results show that a small size and wideband 50-Ω load with a return loss better than 25 dB can be obtained, while the resistor value changes ±30%.
Open Access
Accurate isolation networks in quadrature couplers and power dividers
(IEEE, 2021) Sütbaş, Batuhan; Özbay, Ekmel; Atalar, Abdullah
When quadrature couplers and power dividers are implemented in integrated circuits, accurate isolation networks can not be realized due to the nonideal resistors and the process variations. We present an isolation network design technique which cancels the resistor parasitic effects and also increases the tolerance to variations in the resistance values. A Lange coupler and a power divider are designed at Ka-band using the proposed accurate and process-tolerant isolation networks. The improvement is analytically shown and empirically verified with our in-house GaN-based microstrip MMIC process. For the coupler, the measured return losses and isolation are better than 20 dB from DC to 40 GHz. The power divider achieves 20 dB return losses and isolation in a fractional bandwidth of 50%. Both devices maintain 20 dB performance even when the variation in sheet resistance is as high as 30%.
Open Access
Active metamaterial nearly perfect light absorbers: A review [Invited]
(Optical Society of America, 2019) Hajian, Hodjat; Ghobadi, Amir; Bütün, Bayram; Özbay, Ekmel
Achieving nearly perfect light absorption from the microwave to optical region utilizing metamaterials has begun to play a significant role in photonics and optoelectronics due to their vital applications in thermal emitters, thermal photovoltaics, photovoltaics, sensing, filtering, and photodetection. However, employing passive components in designing perfect absorbers based on metamaterials and photonic crystals imposes some limits on their spectral operation. In order to overcome those limits, extensive research has been conducted on utilizing different materials and mechanisms to obtain active metamaterial light absorbers. In this review paper, we investigate the recent progress in tunable and reconfigurable metamaterial light absorbers through reviewing different active materials and mechanisms, and we provide a perspective for their future development and applications.