60W stacked-HEMT based asymmetric X-band GaN SPDT switch for single chip T/R modules

This paper presents a high-power, asymmetric single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch using high electron mobility transistors (HEMT) with AlGaN/GaN technology for single chip X-band T/R modules. The SPDT switch is designed in series-shunt topology for high-power handling and low-loss performance. For high-power handling, shunt-stacked HEMTs on the transmit (Tx) path and series-stacked HEMTs on the receive (Rx) path are used. In its Tx mode, the switch has achieved an insertion loss better than 0.75 dB throughout the 6-13 GHz bandwidth with a return loss of 14 dB and an isolation of 28 dB. It can handle more than 60 W RF input power at 0.1 dB compression. In its Rx mode, the switch can receive signals with an insertion loss lower than 1.15 dB with 14 dB return loss and 19 dB isolation. With its low insertion and high-power handling capacity from C-band to Ku-band, this switch shows state-of-the-art performance for communication systems.