Absorption enhancement in InGaN-based photonic crystal-implemented solar cells

Date
2012-07-26
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Source Title
Journal of Nanophotonics
Print ISSN
1934-2608
Electronic ISSN
Publisher
SPIE
Volume
6
Issue
1
Pages
061603-1 - 061603-9
Language
English
Type
Article
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Abstract

We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized. (c) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JNP.6.061603]

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Keywords
InGaN, Solar cell, Photonic crystal, Absorption enhancement
Citation
Published Version (Please cite this version)