21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode

Date
2022-11-09
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Source Title
IEEE Sensors Journal
Print ISSN
1530-437X
Electronic ISSN
1558-1748
Publisher
Institute of Electrical and Electronics Engineers
Volume
22
Issue
24
Pages
23699 - 23704
Language
English
Type
Article
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Abstract

Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance–voltage ( Cm – V ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.

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Keywords
Novel drive mode, Sensitivity, Temperature sensing, Vertical metal-oxide-semiconductor (MOS) type diode
Citation
Published Version (Please cite this version)