Browsing by Subject "Photoemission"

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Open Access
1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
(IEEE, Piscataway, NJ, United States, 2000) Necmi, B.; Kimukin, I.; Özbay, Ekmel; Tuttle, G.
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
Open Access
Band alignment issues in metal/dielectric stacks: a combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems
(Electrochemical Society, 2004) Sayan, S.; Bartynski, R.A.; Robertson J.; Suehle, J. S.; Vogel, E.; Nguyen, N. V.; Ehrstein, J.; Kopanski, J. J.; Süzer, Şefik; Holl, M. B.; Garfunkel, E.
We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.
Open Access
Band alignment issues related to HfO2/SiO2/p-Si gate stacks
(American Institute of Physics, 2004-12-15) Sayan, S.; Emge, T.; Garfunkel, E.; Zhao, X.; Wielunski, L.; Bartynski, R. A.; Vanderbilt, D.; Suehle, J. S.; Süzer, Şefik; Banaszak Holl, M.
The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.
Open Access
Differential charging in x-ray photoelectron spectroscopy: a nuisance or a useful tool?
(American Chemical Society, 2003) Süzer, Şefik
We apply a negative bias to the sample while recording an XPS spectrum to enhance differential (positive) charging. The enhanced differential charging is due to the repulsion of stray electrons from the sample, which normally cause partial neutralization of the poorly conducting samples or regions accumulating positive charging, as a consequence of the photoelectron emission. This enhanced differential charging (obtained by negative biasing) is shown to have the ability to separate otherwise overlapping peaks of PDMS layer from that of the SiO2/Si substrate. Each layer experiences different charging that can be used to derive information related to dielectric properties of the layers, proximity of the atoms within composite multilayers, or both. Hence, differential charging in XPS, which is usually considered as a nuisance, is turned into a useful tool for extracting additional information from nanometer-size surface structures.
Open Access
High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector
(IEEE, 2000) Kimukin, İbrahim; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Tuttle, G.
Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonator. The increased field allows the use of a thin absorbing layer, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. Recently, we fabricated high-speed RCE p-i-n and Schottky photodetectors, where a 90% quantum efficiency along with a 3-dB bandwidth of 50 GHz has been reported. We used the transfer matrix method to design the epilayer structure and to simulate the optical properties of the photodiode. The samples were fabricated by a microwave-compatible process and high-speed measurements were made with an optical parametric oscillator.
Open Access
High-speed GaAs-based resonant-cavity-enhanced 1.3-μm photodetector
(SPIE, 2000) Özbay, Ekmel; Kimukin, İbrahim; Bıyıklı, Necmi; Gary, T.
High-speed photodetectors operating at 1.3 and 1.55 μm are important for long distance fiber optic based telecommunication applications. We fabricated GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism. Detectors using internal photoemission have usually very low quantum efficiency. We increased the quantum efficiency using resonant cavity enhancement effect. Resonant cavity enhancement effect also introduced wavelength selectivity which is very important for wavelength division multiplexing based communication systems. The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. The top metal layer serves as the top mirror of the Fabry-Perot cavity. Bottom mirror is composed of 15 pair AlAs/GaAs distributed Bragg reflector. We have used transfer matrix method to simulate the optical properties of the photodiodes. Our room temperature quantum efficiency measurement and simulation of our photodiodes at zero bias show that, we have achieved 9 fold enhancement in the quantum efficiency, with respect to a similar photodetector without a cavity. We also investigated the effect of reverse bias on quantum efficiency. Our devices are RC time constant limited with a predicted 3-dB bandwidth of 70 GHz.
Open Access
Methyldecalin hydrocracking over palladium/zeolite-X
(Elsevier Science Ltd, Exeter, United Kingdom, 2000) Sayan, S.; Demirel, B.; Paul, J.
Hydrocracking of methyldecalin over Pd/REX has been studied with surface sensitive techniques in the critical temperature range 325– 3508C. Results from in situ characterization of adsorbed species, and post-reaction analysis of the catalyst surface by infrared and photoemission spectroscopies, were related to product distributions. The results are discussed in light of quantum chemical calculations of free and catalyst bound intermediates, following ring-opening reactions. Liquid and gaseous products were detected by infrared and UV/Vis spectroscopies. Apparent activation energies of product formation hydrogen consumption, over a broader temperature range, were derived from previous autoclave experiments. An increase in temperature, 325–3508C, results in a shift from preferred cracking products to aromatics, an enhanced level of light hydrocarbon off-gases, and a higher coverage of carbonaceous residues. The increased level of carbonaceous residues is accompanied by a lowered coverage of the reactant, at the surface. The altered product distribution can be characterized by apparent single activation energies, valid from 300 to 4508C. Methane and aromatics show a similar rapid increase with temperature, hydrogen consumption a more timid increase, indicating a reaction limited by diffusion, and cycloalkane production a modest inverse temperature dependence. Fully hydrogenated ring-opening products represent valuable fuel components, but hydrogen deficiency can instead lead to chemisorbed precursors to coke. Our calculations show that cyclohexane, 1,2-diethyl, 3-methyl has a lower heat of formation than the corresponding surface intermediates, but a small enthalpy advantage can easily be countered by entropy effects at higher temperatures. This balance is critical to the formation of preferred products, instead of catalyst deactivation and aromatics. The theoretical results further show that surface intermediates, where the terminating hydrogen is replaced by a C–O bond, have distinct vibrations around 1150 cm21. q2000 Elsevier Science Ltd. All rights reserved.
Open Access
Soft x-ray photoemission studies of Hf oxidation
(A I P Publishing LLC, 2003) Süzer, Şefik; Sayan, S.; Banaszak Holl, M. M.; Garfunkel, E.; Hussain, Z.; Hamdan, N. M.
Charging of oxide films under x rays is an important issue that must be taken into consideration for determination of core-level binding energies as well as valence band offsets. Measurements are taken as a function of time, thickness, and annealing condition. Photoemission results show the presence of metallic Hf with the 4f7/2 binding energy of 18.16 eV, and at least one clear suboxide peak.
Open Access
Variable energy x-ray photoemission studies of alkylsilane based monolayers on gold
(American Chemical Society, 2003) Owens, T. M.; Süzer, S.; Banaszak Holl, M. M.
Gaseous n-hexylsilane (C6H13SiH3), n-octylsilane (C8H17SiH3), and n-octadecylsilane (C18H37SiH3) have been vapor deposited in ultrahigh vacuum (UHV) on freshly evaporated gold surfaces to form monolayers. Surface sensitive X-ray photoemission studies utilizing synchrotron radiation in the 160-360 eV range have been used to characterize these systems. Analyses of the C 1s, Si 2p, and Au 4f and valence band regions permit a structural assessment of the monolayer. The full width at half-maximum of the Si 2p and C 1s core levels, 0.4 and 1.2 or 1.1 eV, respectively, suggest the monolayers are chemically homogeneous. The intensity variation of the Au 4f and Si 2p core levels at different photon energies indicate the surface coverage of the monolayer is ∼96% and the chain orientation is upright on the surface, not parallel to the surface. The valence band of the alkylsilane monolayers exhibit features at ∼-13.2, -14.6, -16.3, -17.6, and -18.9 eV that agree well with those observed for alkyl chains of the same length.
Open Access
X-ray photoemission for probing charging/discharging dynamics
(American Chemical Society, 2006) Süzer, Şefik; Dâna, A.
A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to ± 10.0 V square-wave pulses with varying frequencies in the range of 10-3 to 103 Hz. For a clean silicon sample, the Si2p(Si0) peak appears at correspondingly -10.0 eV and +10.0 eV binding energy positions (20.0 eV difference) with no frequency dependence. However, the corresponding peak of the oxide (Si4+) appears with less than 20.0 eV difference and exhibits a strong frequency dependence due to charging of the oxide layer, which is faithfully reproduced by a theoretical model. In the simplest application of this technique, we show that the two O1s components can be assigned to SiOx and TiO y moeties by correlating their dynamical shifts to those of the Si2p and Ti2p peaks in a composite sample. Our pulsing technique turns the powerful X-ray photoemission into an even more powerful impedance spectrometer with an added advantage of chemical resolution and specificity. © 2006 American Chemical Society.