Band alignment issues in metal/dielectric stacks: a combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems

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bilkent-research-paper.pdf (68.58 KB)

Date

2004

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Source Title

Proceedings of the International Symposium on Advanced Short-time Thermal Processing for Si-based CMOS Devices II

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Publisher

Electrochemical Society

Volume

1

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Pages

255 - 263

Language

English

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Conference Paper

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Abstract

We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.

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Keywords

Band alignments , Dielectric stacks , Photoemission spectroscopy , Work functions , CMOS integrated circuits , Electric insulators , Fermi level , Gates (transistor) , Hafnium compounds , Multilayers , Photoemission , Thermodynamic stability , Threshold voltage , Dielectric materials

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http://hdl.handle.net/11693/27442

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Department of Chemistry