Band alignment issues related to HfO2/SiO2/p-Si gate stacks

Date
2004-12-15
Advisor
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Co-Advisor
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Source Title
Journal of Applied Physics
Print ISSN
0021-8979
Electronic ISSN
Publisher
American Institute of Physics
Volume
96
Issue
12
Pages
7485 - 7491
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
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Abstract

The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

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Book Title
Keywords
Chemical-vapor-deposition, Binding-energy, Hafnium Oxide, Core-level, Hfo2 Films, Photoemission, Dielectrics, Offsets, Rh(111), Valence
Citation
Published Version (Please cite this version)