Browsing by Subject "Electrons"
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Item Open Access Association of ionospheric storms and substorms of global electron content with proxy AE index(Pergamon Press, 2015) Yenen, S. D.; Gulyaeva, T. L.; Arikan, F.; Arıkan, OrhanStorm time modeling of Global Electron Content (GEC) calculated from GIM-TEC for 1999-2013 is associated with new proxy of Auroral Electrojet variability expressed as a smoothed and normalized Auroral Electrojet index (AEsn). The variability in GEC is captured by the computation of DGEC which is obtained by taking the hourly ratio of instant GEC to median of GEC values at the same hour of 7 preceding days. The storm onset is determined by a joint analysis of variations in IMF-B magnitude, its derivative (dB/dt) and direction of IMF-Bz together with sudden increase in AE exceeding 900 nT. The start of the pre-storm period is chosen to be 7 h prior to the storm onset time and the storm recovery period ends 41 h after the storm onset. The hourly AEsn is related to DGEC during the storm period through a polynomial whose coefficients are estimated in the linear least squares sense. Estimated coefficients are examined and grouped with respect to different kinds of auroral storms. Examples of modeling methodology are provided using four different kinds of intense storms and substorms, namely, Positive Arctic, Positive Antarctic, Negative Arctic and Negative Antarctic that occurred between 1999 and 2013. The estimated coefficients for storm periods are compared with those of non-storm periods. It is observed that the positive correlation between the increase of AE and GEC can be a promising precursor of space weather variability.Item Open Access Bound electron pairs in strongly correlated models of high-temperature superconductivity(Natsional'na Akademiya Nauk Ukrainy, 1998) Boyaci, H.; Kulik, I. O.The ground-state energy of two electrons on a ring is calculated for the one-dimensional Hubbard model with positive and negative on-site interaction and for the contraction model with additive and multiplicative interaction terms. The hc/2e periodicity of the ground-state energy with respect to a flux Φ threading the loop is derived. The periodicity may serve as an indication of superconductivity. The results are shown to be consistent with the Lieb-Wu solution for Φ=0 limit. In addition, the new states that were missing in the Lieb-Wu solution are derived.Item Open Access Charging / discharging of thin PS / PMMA films as probed by dynamic x-ray photoelectron spectroscopy(2007) Sezen, H.; Ertas, G.; Dâna, A.; Süzer, ŞefikPolystyrene / polymethyl methacrylate (PS-PMMA) thin films were analyzed for detecting phase separation as well as probing their electrical responses by XPS. It was also shown that electrical parameters like resistance or capacitance can also be extracted using dynamical XPS measurements. A Kratos ES300 electron spectrometer was used for XPS measurements, and a nearby filament provided low-energy electrons for charge neutralization. The results show that under a positive stress, low-energy electrons are attracted to the sample and yield less positive charge on the sample, due to partial neutralization.Item Open Access Collective modes in a quasi-one-dimensional, two-component electron liquid(Pergamon Press, 1994) Tanatar, BilalUnder favorable conditions, a new collective mode besides the usual plasmons may exist in degenerate electron-hole liquids. We calculate the dispersion and damping of this new mode (called the acoustic plasmon mode) in a quasi-one-dimensional, two-component electron liquid. We carry out our calculations first within the random-phase approximation, then include the effects of local-field corrections using a Hubbard-like approximation. The latter decreases the acoustic plasmon dispersion. © 1994.Item Open Access Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories(AIP Publishing, 2008-02) Akça, İmran B.; Dâna, Aykutlu; Aydınlı, Atilla; Turan, R.Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.Item Open Access Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys(American Institute of Physics, 2006) Westmeyer, A. N.; Mahajan, S.; Bajaj, K. K.; Lin J. Y.; Jiang, H. X.; Koleske, D. D.; Senger, R. T.We report the determination of the energy-band offsets between GaN and AlN using the linewidth (full width at half maximum) of an extremely sharp excitonic luminescence transition in Alx Ga1-x N alloy with x=0.18 at 10 K. Our sample was grown on C -plane sapphire substrate by metal-organic chemical-vapor deposition at 1050 °C. The observed value of the excitonic linewidth of 17 meV is the smallest ever reported in literature. On subtracting a typical value of the excitonic linewidth in high-quality GaN, namely, 4.0 meV, we obtain a value of 13.0 meV, which we attribute to compositional disorder. This value is considerably smaller than that calculated using a delocalized exciton model [S. M. Lee and K. K. Bajaj, J. Appl. Phys. 73, 1788 (1993)]. The excitons are known to be strongly localized by defects and/or the potential fluctuations in this alloy system. We have simulated this localization assuming that the hole, being much more massive than the electron, is completely immobile, i.e., the hole mass is treated as infinite. Assuming that the excitonic line broadening is caused entirely by the potential fluctuations experienced by the conduction electron, the value of the conduction-band offset between GaN and AlN is determined to be about 57% of the total-band-gap discontinuity. Using our model we have calculated the variation of the excitonic linewidth as a function of Al composition in our samples with higher Al content larger than 18% and have compared it with the experimental data. We also compare our value of the conduction-band offset with those recently proposed by several other groups using different techniques.Item Open Access Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs(2011) Celik O.; Tiras, E.; Ardali, S.; Lisesivdin, S.B.; Özbay, EkmelMagnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (EF-E1) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime (τq) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m0 and 0.22 m0. Our results for in-plane effective mass are in good agreement with those reported in the literature © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Item Open Access Differential charging in SiO2/Si systems as determined by XPS(American Chemical Society, 2004) Karadas, F.; Ertas, G.; Süzer, ŞefikThe Si2p binding and the SiKLL kinetic energy difference between the SiO2 layer and Si substrate is shown to be influence by application of external voltage bias to the sample holder due to the differential charging as was already reported earlier (Ulgut, B.; Suzer, S. J. Phys. Chem. B 2003, 107, 2939). The cause of this bias induced (physical)-shift is now proven to be mostly due to partial neutralization by the stray electrons within the vacuum system by (i) introducing additional stray electrons via a filament and following their influence on the measured binding energy as a function of the applied voltage, (ii) measuring and Auger parameter. It is also shown that citrate-capped gold nanoclusters deposited on the SiO2/Si system experience differential charging similar to that of the oxide layer rather than the silicon substrate.Item Open Access Differential charging in x-ray photoelectron spectroscopy: a nuisance or a useful tool?(American Chemical Society, 2003) Süzer, ŞefikWe apply a negative bias to the sample while recording an XPS spectrum to enhance differential (positive) charging. The enhanced differential charging is due to the repulsion of stray electrons from the sample, which normally cause partial neutralization of the poorly conducting samples or regions accumulating positive charging, as a consequence of the photoelectron emission. This enhanced differential charging (obtained by negative biasing) is shown to have the ability to separate otherwise overlapping peaks of PDMS layer from that of the SiO2/Si substrate. Each layer experiences different charging that can be used to derive information related to dielectric properties of the layers, proximity of the atoms within composite multilayers, or both. Hence, differential charging in XPS, which is usually considered as a nuisance, is turned into a useful tool for extracting additional information from nanometer-size surface structures.Item Open Access Effective electron-electron interactions and magnetic phase transition in a two-dimensional electron liquid(Elsevier B.V., 2007) Asgari, R.; Esmailian, A.; Tanatar, BilalWe investigate the spin-dependent effective electron-electron interactions in a uniform system of two-dimensional electrons to understand the spontaneous magnetization expected to occur at very low density. For this purpose, we adopt the Kukkonen-Overhauser form for the effective interactions which are built by accurately determined local-field factors describing the charge and spin fluctuations. The critical behavior of the effective interaction for parallel spin electrons allows us to quantitatively locate the transition to the ferromagnetic state at rs ≈ 27. When the finite width effects are approximately taken into account the transition occurs at rs ≈ 30 in agreement with recent quantum Monte Carlo calculations.Item Open Access Electron initiated impact ionization in AlGaN alloys(Institute of Physics, 2002) Bulutay, C.Detailed impact ionization (II) analysis of electrons is presented for AlGaN alloys as a vital resource for solar-blind avalanche photodiode and high power transistor applications. Necessary ingredients for the II characterization are supplied from a recent experiment on the GaN end, and a Keldysh analysis for the AlN end, of the alloy AlGaN. High-field electron dynamics are simulated using an ensemble Monte Carlo framework, accounting for all valleys in the lowest two conduction bands, obtained from accurate empirical pseudopotential band structure computations. The effect of alloy scattering on II is considered and observed to be significant. For any AlxGa1-xN alloy, the electron II coefficients are found to obey the form, A exp(-K/F), for the electric field, F.Item Open Access Electronic transport through a kink in an electron waveguide(Institute of Electrical and Electronics Engineers, 1994) Yalabik, M. C.The current-voltage denendence correspondinp to electronic transport through a kink in an electronic waveguide is analyzed. No phase breaking dissipation mechanisms are considered, but the effects of the Coulomb interaction are included through a self consistent approximation. The results indicate very nonlinear transport properties, including negative differential resistance and bistability. © 1994 IEEEItem Open Access Energy and mass of 3D and 2D polarons in the overall range of the electron-phonon coupling strength(Institute of Physics Publishing Ltd., 1994) Ercelebi, A.; Senger, R. T.The ground-state characterization of the polaron problem is retrieved within the framework of a variational scheme proposed previously by Devreese et al for the bound polaron. The formulation is based on the standard canonical transformation of the strong coupling ansatz and consists of a variationally determined perturbative extension serving for the theory to interpolate in the overall range of the coupling constant. Specializing our considerations to the bulk and strict two-dimensional polaron models we see that the theory yields significantly improved energy upper bounds in the strong coupling regime and, moreover, extrapolates itself successfully towards the well-established weak coupling limits for all polaron quantities of general interest.Item Open Access Energy relaxation of electrons in InGaN quantum wells(Springer New York LLC, 2015-04) Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.; Balkan, N.; Atmaca, G.; Narin, P.; Cakmak, H.; Özbay, EkmelIn this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < Te < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. © 2015, The Minerals, Metals & Materials Society and ASM International.Item Open Access Energy relaxation probed by weak antilocalization measurements in GaN heterostructures(2009) Cheng H.; Bıyıklı, Necmi; Xie J.; Kurdak Ç.; Morko̧ H.Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the Bloch-Grüneisen regime. Weak antilocalization (WAL) and Shubnikov-de Haas measurements were performed on gated Hall bar structures at temperatures down to 0.3 K. We used WAL as a thermometer to measure the electron temperature Te as a function of the dc bias current. We found that the power dissipated per electron, P e, was proportional to Te4 due to piezoelectric acoustic phonon emission by hot electrons. We calculated Pe as a function of Te without any adjustable parameters for both the static and the dynamic screening cases of piezoelectric e-p coupling. In the temperature range of this experiment, the static screening case was expected to be applicable; however, our data was in better agreement with the dynamic screening case. © 2009 American Institute of Physics.Item Open Access Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes(AIP Publishing LLC, 2006) Tut, T.; Gökkavas, M.; Bütün, B.; Bütün, S.; Ülker, E.; Özbay, EkmelThe authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. © 2006 American Institute of Physics.Item Open Access Hartree-Fock approximation of bipolaron state in quantum dots and wires(Springer, 2010) Senger, R. T.; Kozal, B.; Chatterjee, A.; Erçelebi, A.The bipolaronic ground state of two electrons in a spherical quantum dot or a quantum wire with parabolic boundaries is studied in the strong electron-phonon coupling regime. We introduce a variational wave function that can conveniently conform to represent alternative ground state configurations of the two electrons, namely, the bipolaronic bound state, the state of two individual polarons, and two nearby interacting polarons confined by the external potential. In the bipolaron state the electrons are found to be separated by a finite distance about a polaron size. We present the formation and stability criteria of bipolaronic phase in confined media. It is shown that the quantum dot confinement extends the domain of stability of the bipolaronic bound state of two electrons as compared to the bulk geometry, whereas the quantum wire geometry aggravates the formation of stable bipolarons.Item Open Access High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures(2009) Bando, M.; Ohashi, T.; Dede, M.; Akram, R.; Oral, A.; Park, S.Y.; Shibasaki I.; Handa H.; Sandhu, A.Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive properties of micro-Hall devices fabricated using InAlSb/InAsSb/InAlSb heterostructures where electrical conduction was confined to a 30 nm-InAsSb two-dimensional electron gas layer. The 300 K electron mobility and sheet carrier concentration were 36 500 cm2 V-1 s-1 and 2.5× 1011 cm-2, respectively. The maximum current-related sensitivity was 2 750 V A-1 T-1, which was about an order of magnitude greater than AlGaAs/InGaAs pseudomorphic heterostructures devices. Photolithography was used to fabricate 1 μm×1 μm Hall probes, which were installed into a scanning Hall probe microscope and used to image the surface of a hard disk. © 2009 American Institute of Physics.Item Open Access Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c(American Vacuum Society, 2009) Akram, R.; Dede, M.; Oral, A.The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and variable-temperature environments and enables very high magnetic and reasonable topographic resolution to be achieved simultaneously. Micro-Hall probes were produced using optical lithography and reactive ion etching process. The active area of all different types of Hall probes were 1×1 μ m2. Electrical and magnetic characteristics show Hall coefficient, carrier concentration, and series resistance of the hall sensors to be 10 mG, 6.3× 1012 cm-2, and 12 k at 25 °C and 7 mG, 8.9× 1012 cm-2 and 24 k at 125 °C for AlGaNGaN two-dimensional electron gas (2DEG), 0.281 mG, 2.2× 1014 cm-2, and 139 k at 25 °C and 0.418 mG, 1.5× 1014 cm-2 and 155 k at 100 °C for Si and 5-10 mG, 6.25× 1012 cm-2, and 12 k at 25 °C for pseudomorphic high electron mobility transistors (PHEMT) 2DEG Hall probe. Scan of magnetic field and topography of hard disc sample at variable temperatures using all three kinds of probes are presented. The best low noise image was achieved at temperatures of 25, 100, and 125 °C for PHEMT, Si, and AlGaNGaN Hall probes, respectively. This upper limit on the working temperature can be associated with their band gaps and noise associated with thermal activation of carriers at high temperatures.Item Open Access Investigation of hourly and daily patterns for lithosphere-ionosphere coupling before strong earthquakes(IEEE, 2009-06) Karatay, S.; Arıkan F.; Arıkan, OrhanThe ionosphere can be characterized with its electron density distribution which is a complex function of spatial and temporal variations, geomagnetic, solar and seismic activity. An important measurable quantity about the electron density is the Total Electron Content (TEC) which is proportional to the total number of electrons on a line crossing the atmosphere. TEC measurements enable monitoring variations in the space weather. Global Positioning System (GPS) and the network of world-wide receivers provide a cost-effective solution in estimating TEC over a significant proportion of global land mass. In this study, five earthquakes between 2003-2008 that occurred in Japan with different seismic properties, and the China earthquake in May 2008 are investigated. The TEC data set is investigated by using the Kullback-Leibler Divergence (KLI), Kullback-Leibler Distance (KLD) and L2-Norm (L2N) which are used for the first time in the literature in this context and Cross Correlation Function (CCF) which is used in the literature before for quiet day period (QDP), disturbed day period (DDP), periods of 15 days before a strong earthquake (BE) and after the earthquake (AE). In summary, it is observed that the CCF, KLD and L2N between the neighbouring GPS stations cannot be used as a definitive earthquake precursor due to the complicated nature of earthquakes and various uncontrolled parameters that effect the behavior of TEC such as distance to the earthquake epicenter, distance between the stations, depth of the earthquake, strength of the earthquake and tectonic structure of the earthquake. KLD, KLI and L2N are used for the first time in literature for the investigation of earthquake precursor for the first time in literature and the extensive study results indicate that for more reliable estimates further space-time TEC analysis is necessary over a denser GPS network in the earthquake zones. ©2009 IEEE.
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