Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

Date
2011
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Source Title
Physica Status Solidi (C) Current Topics in Solid State Physics
Print ISSN
18626351
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Volume
8
Issue
5
Pages
1625 - 1628
Language
English
Type
Article
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Abstract

Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (EF-E1) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime (τq) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m0 and 0.22 m0. Our results for in-plane effective mass are in good agreement with those reported in the literature © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Keywords
AlGaN, Effective mass, Quantum lifetime, Shubnikov de Haas, AlGaN, AlGaN/gaN, Carrier density, D electrons, Effective mass, Electronic transport properties, Experimental data, Fermi energy, Hall resistance, In-plane, Magnetic field dependencies, Nonoscillatory, Quantum lifetime, Quantum lifetimes, Shubnikov-de Haas, Sub-bands, Subband energies, Electric resistance, Gallium nitride, Magnetic fields, Magnetoelectronics, Magnetoresistance, Transport properties, Electrons
Citation
Published Version (Please cite this version)