Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes

Date
2006
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing LLC
Volume
89
Issue
18
Pages
183524-1 - 183524-3
Language
English
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Abstract

The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. © 2006 American Institute of Physics.

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