Energy relaxation of electrons in InGaN quantum wells
Date
2015-04
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Source Title
Metallurgical and Materials Transactions A - Physical Metallurgy and Materials Science
Print ISSN
1073-5623
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Publisher
Springer New York LLC
Volume
46
Issue
4
Pages
1565 - 1569
Language
English
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Abstract
In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < Te < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. © 2015, The Minerals, Metals & Materials Society and ASM International.
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Keywords
Electron energy levels , Electrons , High electron mobility transistors , Inelastic scattering , Semiconducting indium compounds , Semiconductor quantum wells , Electron energies , Energy relaxation , Inelastic scattering rate , InGaN quantum wells , N-channel , Non-equilibrium electrons , Power-losses , Theoretical values , Electron temperature