Browsing by Subject "Capacitance"

Now showing 1 - 19 of 19

Open Access
Calculation of transformer ratio in mason's equivalent circuit for cMUTs
(IEEE, 2006) Ölçüm, Selim; Atalar, Abdullah; Köymen, Hayrettin; Şenlik, Muhammed Niyazi
We present a new method to calculate the transformer ratio of a cMUT in Mason's Equivalent circuit model. The effect of the spring softening capacitance is also included in the analysis. We use the existing turns ratio calculation methods as a starting point to calculate the force-voltage ratio at the secondary of the transformer and the input port of the circuit. We use this ratio and the capacitances in the Mason's circuit to find the actual turns ratio. Different methods are discussed for the calculation of the equivalent circuit parameters. We show that the transformer ratio has a bounded maximum at collapse voltage. We also investigate the effect of electrode size on the transformer ratio. Transformer ratio decreases with decreasing electrode size.
Open Access
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015) Turut, A.; Karabulut, A.; Ejderha, K.; Bıyıklı, Necmi
We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.
Open Access
Charge retention in quantized energy levels of nanocrystals
(Elsevier B.V., 2007) Dâna, A.; Akça, I.; Ergun, O.; Aydınlı, Atilla; Turan, R.; Finstad, T. G.
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs.
Open Access
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes
(Elsevier, 2010-10-13) Arslan, E.; Bütün, S.; Şafak, Y.; Çakmak, H.; Yu, H.; Özbay, Ekmel
The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current transport mechanisms for (Ni/Au)-AlN/GaN SBDs, by taking the Js(tunnel), E 0, and Rs as adjustable fit parameters, the experimental J-V data were fitted to the analytical expressions given for the current transport mechanisms in a wide range of applied biases and at different temperatures. Fitting results show the weak temperature dependent behavior in the saturation current and the temperature independent behavior of the tunneling parameters in this temperature range. Therefore, it has been concluded that the mechanism of charge transport in (Ni/Au)-AlN/GaN SBDs, along the dislocations intersecting the space charge region, is performed by tunneling. In addition, in order to analyze the trapping effects in (Ni/Au)-AlN/GaN SBDs, the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range 0.7-50 kHz. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming the models in which traps are located at the heterojunction interface. The density (Dt) and time constants (τt) of the trap states have been determined as a function of energy separation from the conduction-band edge (Ec - Et) as Dt≅ (5-8)×10 12eV-1 cm-2andτt≅(43-102) μs, respectively.
Open Access
Design charts to maximize the gain-bandwidth product of capacitive micromachined ultrasonic transducers
(IEEE, 2005) Ölçüm, Selim; Şenlik, Muhammed Niyazi; Bayram, Can; Atalar, Abdullah
In this work we define a performance measure for capacitive micromachined ultrasonic transducers (cMUT) in the form of a gain-bandwidth product to investigate the conditions that optimize the gain and bandwidth with respect to device dimensions, electrode size and electrical termination resistance. For the transmit mode, we define the figure of merit as the pressure-bandwidth product. Fully-metallized membranes achieve a higher pressure-bandwidth product compared to partially metallized ones. It is shown that the bandwidth is not affected by the electrode size in the transmit mode. In the receive mode, we define the figure of merit as the gain-bandwidth product. We show in this case that the figure of merit can be maximized by optimizing the electrode radius. We present normalized charts for designing an optimum cMUT cell at the desired frequency with a given bandwidth for transmit or receive modes. The effect of spurious capacitance and liquid loading effect are considered. Design examples are given to clarify the use of these charts.
Open Access
Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers
(American Physical Society, 2021-12-13) Mogulkoc, Y.; Mogulkoc, A.; Guler, H. E.; Durgun, Engin
In alignment with the efforts on miniaturizing the components of electronic devices with enhanced performance, we investigate a dielectric nanocapacitor (DNC) based on metallic borophene electrodes separated with insulating hexagonal boron nitride (h-BN) monolayers (n=1–5). The capacitive performance of the proposed DNC as a function of applied electric field (→E) and thickness of the dielectric material is examined by using ab initio methods. The borophene plates and h-BN monolayers are commensurate and coupled only with van der Waals interaction, which constitutes an ideal configuration as a DNC. It is found that a single h-BN layer is not thick enough as a spacer to hinder quantum tunneling effects, and similar to the case with no insulating layer, borophene electrodes are shorted. Being effective from two h-BN layers, the charge separation on borophene plates is attained via →E in the vertical direction. The capacitance of the DNC rapidly saturates at →E≥0.1V/Å and reaches its maximum value of 0.77μF/cm2 for n=2. The capacitance decreases with an increasing number of insulating layers as the distance between electrodes enlarges and shows a similar trend that is expected from the classical Helmholtz model. Our results suggest metallic and lightweight borophene and insulating h-BN monolayers as ideal constituents for the DNC design.
Open Access
Determination of current transport and trap states density in AlInGaN/GaN heterostructures
(Elsevier, 2019) Arslan, Engin; Ural, Sertaç; Altındal, Ş.; Özbay, Ekmel
The energy distribution and the relaxation time constant of the trap states with respect to conduction bands in the (Ni/Au) Schottky contact on AlInGaN/GaN heterostructures were investigated using the admittance technique. The potential dependent capacitance/conductance measurements were done in the frequency range of 5 kHz to 5 MHz at a temperature of 300 K. We found strong frequency dispersions at the accumulation regions and at the sharp transition regions (depletion region) in the capacitance curves. High frequency dispersion at the accumulation regions in C-V characteristics indicates that there is a high-density of surface traps between the metal–AlInGaN quaternary layer interfaces. Furthermore, the frequency dispersion at the sharp transition regions behavior can be attributed to the interface traps state between the AlInGaN quaternary layer and GaN layer. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming the models in which traps are located between the metal–AlInGaN interface (surface traps) and between AlInGaN/GaN interfaces (interface traps). The trap states density and time constants of the traps states were calculated as a function of energy separation from the conduction-band edge. The trap states' densities change between 1.3 × 1011 eV−1 cm−2 and 6.2 × 1011 eV−1 cm−2. Also, 4.8 to 5.3 μs time interval calculated for the relaxation times.
Open Access
Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition
(Institute of Electrical and Electronics Engineers Inc., 2015) Altuntas, H.; Ozgit Akgun, C.; Donmez, I.; Bıyıklı, Necmi
In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate the electrical characteristics of these AlN films, MIS capacitor structures were fabricated and characterized using current-voltage and high-frequency (1 MHz) capacitance-voltage measurements. The results showed that the current transport mechanism under accumulation mode is strongly dependent on the applied electric field and thickness of the AlN film. Possible conduction mechanisms were analyzed, and the basic electrical parameters were extracted and compared for AlN thin films with different thicknesses. Compared with 7-nm-thick film, a 47-nm-thick AlN film showed a lower effective charge density and threshold voltage along with a higher dielectric constant.
Unknown
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010) Altindal, S.; Şafak, Y.; Taşçloǧlu I.; Özbay, Ekmel
(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias barrier height (BH) (φBO), ideality factor (n), series resistance (Rs) of the structure, and the interface state density (Nss). Some of these parameters were determined from both I-V and admittance (C-V and G/ω-V) measurements at room temperature and at 1 MHz and were compared. The experimental results show that the value of N ss in a Schottky contact without passivation is nearly 1 order of magnitude larger than that in a Schottky contact with SiNx passivation layers. Also, the values of Rs increase with the increasing thickness of the passivation layer. In the forward bias region, the negative values of capacitance are an attractive result of this study. This negative capacitance disappears in presence of the passivation layer. Copyright © 2010 John Wiley & Sons, Ltd.
Open Access
A figure of merit for optimization of nanocrystal flash memory design
(2008) Dâna, A.; Akca, I.; Aydınlı, Atilla; Turan, R.; Finstad, T. G.
Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel dielectric properties. The performance of a nanocrystal memory device can be expressed in terms of write/erase speed, carrier retention time and cycling durability. We present a model that describes the charge/discharge dynamics of nanocrystal flash memories and calculate the effect of nanocrystal, gate, tunnel dielectric and substrate properties on device performance. The model assumes charge storage in quantized energy levels of nanocrystals. Effect of temperature is included implicitly in the model through perturbation of the substrate minority carrier concentration and Fermi level. Because a large number of variables affect these performance measures, in order to compare various designs, a figure of merit that measures the device performance in terms of design parameters is defined as a function of write/erase/discharge times which are calculated using the theoretical model. The effects of nanocrystal size and density, gate work function, substrate doping, control and tunnel dielectric properties and device geometry on the device performance are evaluated through the figure of merit. Experimental data showing agreement of the theoretical model with the measurement results are presented for devices that has PECVD grown germanium nanocrystals as the storage media. Copyright
Open Access
Improved performance of cMUT with nonuniform membranes
(IEEE, 2005-09) Şenlik, Muhammed N.; Olcum, Selim; Atalar, Abdullah
When capacitive micromachined ultrasonic transducers are immersed in water, the bandwidth of the device is limited by the membrane's second resonance frequency. At this frequency no mechanical power to immersion medium can be transferred. We present a membrane shape to shift the second resonance frequency to a higher value. The structure consists of a very thin membrane at the outer rim with a rigid mass at the center. The stiffness of the central region moves the second resonance to a higher frequency. This membrane configuration is shown to work better in terms of gain and bandwidth as compared to conventional uniform membranes in both transmission and reception. © 2005 IEEE.
Open Access
Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis
(Springer US, 2010-09-17) Arslan, Engin; Bütün, Serkan; Şafak, Yasemin; Özbay, Ekmel
We present a systematic study on the admittance characterization of surface trap states in unpassivated and SiN x -passivated Al 0.83In 0.17N/AlN/GaN heterostructures. C-V and G/ω-V measurements were carried out in the frequency range of 1 kHz to 1 MHz, and an equivalent circuit model was used to analyze the experimental data. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming models in which traps are located at the metal-AlInN surface. The density (D t) and time constant (τ t) of the surface trap states have been determined as a function of energy separation from the conduction-band edge (E c - E t). The D st and τ st values of the surface trap states for the unpassivated samples were found to be D st≅ (4 - 13)× 10 12 eV - 1 cm - 2 and τ st ≈ 3 μs to 7 μs, respectively. For the passivated sample, D st decreased to 1.5× 10 12eV - 1cm - 2 and τ st to 1.8 μs to 2 μs. The density of surface trap states in Al 0.83In 0.17N/AlN/GaN heterostructures decreased by approximately one order of magnitude with SiN x passivation, indicating that the SiN x insulator layer between the metal contact and the surface of the Al 0.83In 0.17N layer can passivate surface states.
Open Access
Methods for probing charging properties of polymeric materials using XPS
(2010) Sezen, H.; Ertas, G.; Süzer, Şefik
Various thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, and three different forms of (square-wave (SQW), sinusoidal (SIN) and triangular (TRG)), a.c. pulses. All films exhibit charging shifts as observed in the position of the corresponding C1s peak under d.c. bias. The a.c. pulses convert the single C1s peak to twinned peaks in the case of the square-wave form, and distort severely in the cases of the SIN, and TRG forms, and all three of them exhibit strong frequency dependence. In order to mimic and better understand the behavior of these polymeric materials, an artificial dielectric system consisting of a clean Si-wafer coupled to an external 1 MΩ resistor and 56 nF capacitor is created, and its response to different forms of voltage stimuli, is examined in detail. A simple electrical circuit model is also developed treating the system as consisting of a parallel resistor and a series capacitor. With the help of the model, the response of the artificial system is successfully calculated as judged by comparison with the experimental data. Using one high frequency SQW measurements, the off-set in the charging shift due to the extra low-energy neutralizing electrons is estimated. After correcting the corresponding off-set shifts, the XPS spectra of the three different PS films, one PMMA, and one PS + PMMA blend film are re-examined. As a result of these detailed analysis, there emerges a clear relationship between the thicknesses of the PS films with their charging abilities. In the blend film, PS and PMMA domains are electrically separated, and exhibit different charging shifts, however, the presence of one is felt by the other. Hence, the PS component shifts are larger in the blend, due to the presence of PMMA domains, which has intrinsically a larger Reff, and conversely the PMMA component shifts are smaller due to the presence of PS domains.
Open Access
A new detection method for capacitive micromachine ultrasonic transducers
(IEEE, 2001) Ergun, A. S.; Temelkuran, B.; Özbay, Ekmel; Atalar, Abdullah
Capacitive micromachine ultrasonic transducers (cMUT) have become an alternative to piezoelectric transducers in the past few years. They consist of many small circular membranes that are connected in parallel. In this work, we report a new detection method for cMUTs. We model the membranes as capacitors and the interconnections between the membranes as inductors. This kind of LC network is called an artificial transmission line. The vibrations of the membranes modulate the electrical length of the transmission line, which is proportional to the frequency of the signal through it. By measuring the electrical length of the artificial line at a high RF frequency (in the gigahertz range), the vibrations of the membranes can be detected in a very sensitive manner. For the devices we measured, we calculated the minimum detectable displacement to be in the order of 10 -5 Å/√Hz with a possible improvement to 10 -7 Å/√Hz.
Open Access
A new detection method for capacitive micromachined ultrasonic transducers
(IEEE, 1998) Ergun, A. S.; Temelkuran, B.; Özbay, Ekmel; Atalar, Abdullah
Capacitive micromachined ultrasonic transducers (cMUT) have become an alternative to piezoelectric transducers in the past few years. They usually consist of many small membranes all in parallel. In this work we report a new detection method for cMUT's. We arrange the membranes in the form of an artificial transmission line by inserting small inductances between the membranes. The vibrations of the membranes modulate the electrical length of the transmission line, which is proportional to the total capacitance and the frequency of the signal through it. By measuring the electrical length of the artificial line at a RF frequency in the GHz range, the vibrations of the membranes can be detected in a very sensitive manner. For the detector structure we considered a minimum detectable displacement in the order of 10-7 angstroms/√Hz is expected.
Open Access
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods
(Elsevier, 2011-06-08) Demirezen, S.; Altindal, S.; Özelik, S.; Özbay, Ekmel
In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of (Ni/Au)/Al 0.22Ga0.78N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/ω-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (-5 V)-(+5 V), respectively. The voltage dependent Rs profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (σac) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C m) and conductance (Gm/ω) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of Nss and R s is confirmed to have significant effect on non-ideal I-V, C-V and G/ω-V characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/ GaN heterostructures.
Open Access
A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach
(Cambridge University Press, 2017) Ghobadi, Amir; Khan, Talha Masood; Celik, Ozan Onur; Biyikli, Necmi; Okyay, Ali Kemal; Topalli, Kagan
In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach.
Open Access
Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing
(Elsevier BV * North-Holland, 2017) Bayrak, T.; Ozgit-Akgun, C.; Goldenberg, E.
Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was ~ 85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90–2.07 (λ = 550 nm). Post-deposition annealing at 800 °C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46–72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications.
Open Access
XPS analysis with pulsed voltage stimuli
(2006) Karabudak, E.; Demirok, U. K.; Süzer, Şefik
We record XPS spectra while applying 0 to +10 V or 0 to -10 V square pulses to the sample rod, which normally results in twinning of all peaks at correspondingly increased (for +10 V) or decreased (for -10 V) binding energies. For poorly conducting samples, like silicon oxide layer on a silicon substrate, the twinned peaks appear at different energies due to differential charging, which also vary with respect to the frequency of the applied pulses. Moreover, the frequency dependence varies with the thickness and can be correlated with the capacitance of the oxide layer. The technique is simple and can lead to extract important information related with dielectric properties of surface structures in a totally non-contact fashion. © 2005 Elsevier B.V. All rights reserved.