Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Date
2015
Advisor
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Instructor
Source Title
Materials Science in Semiconductor Processing
Print ISSN
1369-8001
Electronic ISSN
Publisher
Elsevier Ltd
Volume
39
Issue
Pages
400 - 407
Language
English
Type
Article
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Abstract

We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.

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Keywords
Atomic layer deposition, Bias voltage, Capacitance, Diodes, Electric resistance, Gold, Gold deposits, Rectifying circuits, Semiconductor devices, Semiconductor diodes, Atomic layer deposited, Conductance current, Forward bias voltage, Interfacial property, Measurement frequency, Metal semiconductors, Reverse bias voltage, Series resistances, Current voltage characteristics
Citation
Published Version (Please cite this version)