Browsing by Subject "Annealing"

Now showing 1 - 20 of 22

Open Access
Air-stable n-channel diketopyrrolopyrrole-diketopyrrolopyrrole oligomers for high performance ambipolar organic transistors
(American Chemical Society, 2016) Mukhopadhyay, T.; Puttaraju, B.; Senanayak, S. P.; Sadhanala, A.; Friend, R.; Faber, H. A.; Anthopoulos, T. D.; Salzner, U.; Meyer A.; Patil, S.
n-channel organic semiconductors are prone to oxidation upon exposed to ambient conditions. Herein, we report design and synthesis of diketopyrrolopyrrole (DPP)-based oligomers for ambipolar organic thin-film transistors (OFETs) with excellent air and bias stability at ambient conditions. The cyclic voltammetry measurements reveal exceptional electrochemical stability during the redox cycle of oligomers. Structural properties including aggregation, crystallinity, and morphology in thin film were investigated by UV-visible spectroscopy, atomic force microscopy (AFM), thin-film X-ray diffraction (XRD), and grazing incidence small-angle X-ray scattering (GISAXS) measurements. AFM reveals morphological changes induced by different processing conditions whereas GISAXS measurements show an increase in the population of face-on oriented crystallites in films subjected to a combination of solvent and thermal treatments. These measurements also highlight the significance of chalcogen atom from sulfur to selenium on the photophysical, optical, electronic, and solid-state properties of DPP-DPP oligomers. Charge carrier mobilities of the oligomers were investigated by fabricating top-gate bottom-contact (TG-BC) thin-film transistors by annealing the thin films under various conditions. Combined solvent and thermal annealing of DPP-DPP oligomer thin films results in consistent electron mobilities as high as ∼0.2 cm2 V-1 s-1 with an on/off ratio exceeding 104. Field-effect behavior was retained for up to ∼4 weeks, which illustrates remarkable air and bias stability. This work paves the way toward the development of n-channel DPP-DPP-based oligomers exhibiting retention of field-effect behavior with superior stability at ambient conditions.
Open Access
Atomistic structure simulation of silicon nanocrystals driven with suboxide penalty energies
(American Scientific Publishers, 2008) Yılmaz, Dündar E.; Bulutay, Ceyhun; Çağın, T.
The structural control of silicon nanocrystals embedded in amorphous oxide is currently an important technological problem. In this work, an approach is presented to simulate the structural behavior of silicon nanocrystals embedded in amorphous oxide matrix based on simple valence force fields as described by Keating-type potentials. After generating an amorphous silicon-rich-oxide, its evolution towards an embedded nanocrystal is driven by the oxygen diffusion process implemented in the form of a Metropolis algorithm based on the suboxide penalty energies. However, it is observed that such an approach cannot satisfactorily reproduce the shape of annealed nanocrystals. As a remedy, the asphericity and surface-to-volume minimization constraints are imposed. With the aid of such a multilevel approach, realistic-sized silicon nanocrystals can be simulated. Prediction for the nanocrystal size at a chosen oxygen molar fraction matches reasonably well with the experimental data when the interface region is also accounted. The necessity for additional shape constraints suggests the use of more involved force fields including long-range forces as well as accommodating different chemical environments such as the double bonds.
Open Access
Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02) Akça, İmran B.; Dâna, Aykutlu; Aydınlı, Atilla; Turan, R.
Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.
Open Access
Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors
(Elsevier, 2013) Chen W.; McCarthy, K.G.; O'Brien, S.; Çopuroǧlu, Mehmet; Cai, M.; Winfield, R.; Mathewson, A.
This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. © 2012 Elsevier B.V.
Open Access
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014) Altuntas, H.; Donmez, I.; Ozgit Akgun, C.; Bıyıklı, Necmi
In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed under N2 ambient at 600, 700, and 800 C to obtain β-phase. The structure and microstructure of the β-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of β-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/β-Ga2O3/p-Si metal-oxide- semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the β-Ga2O3 thin films were annealed at 800 C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (RS), ideality factor (n), zero-bias barrier height (Bo), and interface states (NSS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (ESS-EV) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (e), and RS into account. Also using the Norde function and C-V technique, e values were calculated and cross-checked. Results show that β-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and β-Ga2O3 oxide layer.
Open Access
Examination of the temperature related structural defects of InGaN/GaN solar cells
(Academic Press, 2015) Durukan, İ. K.; Bayal, Ö.; Kurtuluş, G.; Baş, Y.; Gültekin, A.; Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Özçelik, S.; Özbay, Ekmel
In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350 °C. The defect density increased on the GaN layer starting from 350 °C and reaching above 400 °C. A similar trend is observed on the InGaN layer, too.
Open Access
Examining the annealing schedules for RNA design algorithm
(IEEE, 2016-07) Erhan, H. E.; Sav, Sinem; Kalashnikov, S.; Tsang, H. H.
RNA structures are important for many biological processes in the cell. One important function of RNA are as catalytic elements. Ribozymes are RNA sequences that fold to form active structures that catalyze important chemical reactions. The folded structure for these RNA are very important; only specific conformations maintain these active structures, so it is very important for RNA to fold in a specific way. The RNA design problem describes the prediction of an RNA sequence that will fold into a given RNA structure. Solving this problem allows researchers to design RNA; they can decide on what folded secondary structure is required to accomplish a task, and the algorithm will give them a primary sequence to assemble. However, there are far too many possible primary sequence combinations to test sequentially to see if they would fold into the structure. Therefore we must employ heuristics algorithms to attempt to solve this problem. This paper introduces SIMARD, an evolutionary algorithm that uses an optimization technique called simulated annealing to solve the RNA design problem. We analyzes three different cooling schedules for the annealing process: 1) An adaptive cooling schedule, 2) a geometric cooling schedule, and 3) a geometric cooling schedule with warm up. Our results show that an adaptive annealing schedule may not be more effective at minimizing the Hamming distance between the target structure and our folded sequence's structure when compared with geometric schedules. The results also show that warming up in a geometric cooling schedule may be useful for optimizing SIMARD. © 2016 IEEE.
Open Access
Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films
(Elsevier, 2006) Dana, A.; Tokay, S.; Aydınlı, Atilla
Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration anneals in vacuum resulted in Ge nanocrystals whereas prolonged anneals at higher temperatures resulted in Ge nanocrystals accompanied with SiGe formation at the SiNx/Si interface. Raman Scattering Spectroscopy was extensively used to track the formation of various phonon modes during the diffusion of Ge through SiNx and into the Si substrate.
Open Access
Growth and characterization of nanocrystalline SrTiOx films: room temperature deposition using RF sputtering system in a pure argon environment
(Institute of Physics Publishing, 2017-05) Bayrak, Türkan; Goldenberg, Eda
We report a comprehensive description of the structure, optical and electrical properties of asdeposited and annealed SrTiOx (STO) thin films. Nanocrystalline STO films were deposited on p-type Si (1 0 0) and UV-grade fused silica substrates by RF magnetron sputtering at room temperature in a pure argon environment. Well adhered and transparent films with very smooth surfaces were obtained. As-deposited films showed 70% transparency in the visible spectrum, transparency increased to 77% after annealing at 700 °C. The direct and indirect optical band gaps were found to be 2.88 eV and 2.44 eV, for as-deposited films. For annealed films, indirect band gap increased to 2.57 eV while the direct optical band gap value remained constant. Upon annealing, the refractive indices (n) of the films decreased from 2.36 to 2.32. Ag/STO/p-Si device structures were also fabricated and characterized by current-voltage, capacitance-voltage and dielectric measurements. The calculated values are compared with experimental data from the literature and discussed in terms of device performances. A butterfly loop-type hysteresis curve was observed for the voltage-dependent capacitance measurement in annealed thin film devices. Dielectric constants were calculated as 31.7 and 57.4 for as-deposited and annealed films at 100 kHz, respectively. Charge storage capacity was found to be >4.5 μC cm-2 for as-deposited and 3.5 μC cm-2 for annealed films.
Open Access
Infrared luminescence of annealed germanosilicate layers
(Elsevier, 2014-03) Tokay, M. S.; Yasar, E.; Agan, S.; Aydınlı, Atilla
In the light of growing importance of semiconductor nanocrystals for photonics, we report on the growth and characterization of annealed germanosilicate layers used for Ge nanocrystal formation. The films are grown using plasma enhanced chemical vapor deposition (PECVD) and post-annealed in nitrogen at temperatures between 600 and 1200 degrees C for as long as 2 h. Transmission electron microscopy (TEM), Raman scattering and photoluminescence spectroscopy (PL) has been used to characterize the samples both structurally and optically. Formation of Ge precipitates in the germanosilicate layers have been observed using Raman spectroscopy for a variety of PECVD growth parameters, annealing temperatures and times. Ge-Ge mode at similar to 300 cm(-1) is clearly observed at temperatures as low as 700 degrees C for annealing durations for 45 min. Raman results indicate that upon annealing for extended periods of time at temperatures above 900 degrees C; nanocrystals of few tens of nanometers in diameter inside the oxide matrix and precipitation and interdiffusion of Ge, forming SiGe alloy at the silicon and oxide interface take place. Low temperature PL spectroscopy has been used to observe luminescence from these samples in the vicinity of 1550 nm, an important wavelength for telecommunications. Observed luminescence quenches at 140 K. The photoluminescence data displays three peaks closely interrelated at approximately 1490,, 1530 and 1610 nm. PL spectra persist even after removing the oxide layer indicating that the origin of the infrared luminescent centers are not related to the Ge nanocrystals in the oxide layer. (C) 2013 Elsevier B.V. All rights reserved.
Open Access
Low temperature growth, characterization and applications of rf-sputtered SrTiO3 and BaSrTiO3 thin films
(2016-03) Bayrak, Türkan
Among the several perovskite ferroelectric oxides, SrTiO3 (STO) and BaSrTiO3 (BST) thin lms have attracted signi cant attention due to their potential applications in oxide-based electronics. However, reliability and performance of STO and BST thin lms depend usually on the precise knowledge of microstructure, as well as optical and electrical properties. STO and BST thin lms were deposited at room-temperature on Si (100), UVgrade fused silica, quartz substrates and TiO2 nano bers by radio frequency (RF) magnetron sputtering using di erent plasma power, oxygen mixing ratios (OMRs) and deposition pressure levels. As-deposited thin lms showed amorphous-like nanocrystalline microstructure almost independent of the deposition conditions. In uence of post-deposition annealing at various temperatures of RF sputtered STO thin lms were also investigated. All lms were found to be highly transparent (>75%) in the visible region, and both STO and BST lms exhibited well de ned main absorption edges: the calculated indirect and direct band gaps for STO lms were in the range of 2.32 to 4.55 eV. The refractive index of the STO lms increased with OMR and post-deposition annealing for 3 mTorr deposition for STO, BST and STO annealing study. However, there is no correlation for 5 mTorr deposition. The refractive indices of BST lms were in the range of 1.90-2.07 at 550 nm depending on their deposition conditions. The optical band gap of the BST lms were calculated the ranging in 3.60 to 4.30 eV. Electrical dielectric constant values of the STO thin lms were extracted from frequency or voltage dependent capacitance measurements using micro-fabricated Ag/STO/p-Si device structures. High dielectric constant values reaching up to 100 were obtained. All STO samples exhibited more than 2.5 C/cm2 charge storage capacity and low dielectric loss (less than 0.07 at 100 kHz). Post-deposition annealing at 800oC for 1 h resulted in polycrystalline BST thin lms with increased refractive indices and dielectric constants, along with reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46-72, and the observed leakage current was very small,less than 1 A. Our experimental results show that these low temperature grown STO and BST lms have the potential for various electrical applications.
Open Access
Microstructural characterization of medical-grade stainless steel powders prepared by mechanical alloying and subsequent annealing
(Elsevier, 2013) Salahinejad, E.; Hadianfard, M. J.; Ghaffari, M.; Amini, R.; Mashhadi, S. B.; Okyay, Ali Kemal
The harmful effect of nickel ions released from conventional stainless steel implants has provided a high level of motivation for the further development of nickel-free stainless steels. In this paper, the microstructure of medical-grade nickel-free stainless steel powders, with the chemical composition of ASTM F2581, is studied during mechanical alloying and subsequent annealing. Rietveld X-ray diffraction and transmission electron microscopy evaluations reflect nanocrystallization, austenitization and amorphization of the powders due to mechanical activation. It is also realized that annealing of the as-milled powder can develop a single austenitic structure with nanometric crystallite sizes, implying a considerable inherent resistance to grain growth. This study demonstrates the merit of mechanical alloying and subsequent annealing in the development of nanostructured medical-grade stainless steels.
Open Access
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2014) Goldenberg, E.; Ozgit-Akgun, C.; Bıyıklı, Necmi; Kemal Okyay, A.
Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al xGa1-xN films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼ 85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and AlxGa1-xN were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33-1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga 2O3 formation and following phase change. The optical bandgap value of as-deposited AlxGa1-xN films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films. © 2014 American Vacuum Society.
Open Access
Postdeposition annealing on RF-sputtered SrTiO3 thin films
(AVS Science and Technology Society, 2017) Bayrak, T.; Kizir,S.; Kahveci, E.; Bıyıklı, N.; Goldenberg, E.
Understanding of structural, optical, and electrical properties of thin films are very important for a reliable device performance. In the present work, the effect of postdeposition annealing on stoichiometric SrTiO3 (STO) thin films grown by radio frequency magnetron sputtering at room temperature on p-type Si (100) and quartz substrates were studied. Highly transparent and well adhered thin films were obtained in visible and near infrared regions. As-deposited films were amorphous, while nanocrystalline and polycrystalline phases of the STO thin films formed as a function of annealing temperature. Films annealed at 300 ï¿½C showed nanocrystallinity with some amorphous phase. Crystallization started after 15 min annealing at 700 ï¿½C, and further improved for films annealed at 800 ï¿½C. However, crystallinity reduced for films which were annealed at 900 ï¿½C. The optical and electrical properties of STO thin films affected by postdeposition annealing at 800 ï¿½C: Eg values decreased from 4.50 to 4.18 eV, n(λ) values (at 550 nm) increased from 1.81 to 2.16. The surface roughness increased with the annealing temperature due to the increased crystallite size, densification and following void formation which can be seen from the scanning electron microscopy images. The highest dielectric constants (46 at 100 kHz) observed for films annealed at 800 ï¿½C; however, it was lower for 300 ï¿½C annealed (25 at 100 kHz) and as-deposited (7 at 100 kHz) STO films having ∼80 nm thickness.
Open Access
Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H
(Pergamon Press, 1994) Compaan, A.; Savage, M. E.; Aydınlı, Atilla; Azfar, T.
We have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows that recrystallization begins with the first laser pulse but the multiple pulses are needed to generate the highest hole concentrations of ∼6×1020 cm-3. In boron-doped a-Si:H the electron concentration reaches ∼1×1021 cm-3 after laser anneal which produces a dip rather than a peak near the phonon line as a consequence of a negative Fano-interference parameter, q. The results show that Raman scattering can be used to obtain carrier concentrations in poly-silicon provided that wavelength-dependent Fano interference effects are properly included. © 1994.
Open Access
Silicon oxynitride layers for applications in optical waveguides
(2000-09) Ay, Feridun
Silicon oxynitride layers, aimed to serve as the core material for optical waveguides operating at l.55µm, v.-ere grown by a PECVD technique using SiH4, N20, and NH3 as precursor gases. The films were deposited at 350 °c, 13.56 MHz RF frequency, and 1 Torr pressure by varying the flow rates of N20 and l\"H3 gases. The resulting refractirn indices of the layers varied between 1.47 and 2.0. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. A special attention was given to the N-H bond stretching absorption at 3300-3400 cm-1, since its first overtone is known to be the main cause of the optical absorption at l.55µm. An annealing study was performed in order to reduce or eliminate this bonding type. For the annealed samples the corresponding concentration was strongly reduced as verified by FTIR transmittance and ATR methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. lts absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides.
Open Access
Structural and loss characterization of SiON layers for optical waveguide applications
(IEEE, 2000) Ay, Feridun; Aydınlı, Atilla; Roeloffzen, C.; Driessen, A.
Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm-1 and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.
Open Access
Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing
(Elsevier BV * North-Holland, 2017) Bayrak, T.; Ozgit-Akgun, C.; Goldenberg, E.
Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was ~ 85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90–2.07 (λ = 550 nm). Post-deposition annealing at 800 °C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46–72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications.
Open Access
Surface ionic states and structure of titanate nanotubes
(Royal Society of Chemistry, 2015) Vempati S.; Kayaci-Senirmak, F.; Ozgit Akgun, C.; Bıyıklı, Necmi; Uyar, Tamer
Here we present an investigation on Zn-Ti-O ternary (zinc titanate) nanostructures which were prepared by a combination of electrospinning and atomic layer deposition. Depending on the ZnO and TiO2 molar ratio, two titanates and one mix phased compound were synthesized by varying the post-annealing temperatures. Specifically Zn2TiO4, ZnTiO3 and ZnO/TiO2 nanostructures were fabricated via thermal treatments (900, 700, 800 °C, respectively). Structural studies unveiled the titanate phase of the nanostructures. Furthermore, the ionic states of the titanate nanostructures on the surface are revealed to be Ti3+ and Zn2+. Spin-orbit splitting of Zn2p and Ti2p doublets were, however, not identical for all titanates which vary from 23.09-23.10 eV and 5.67-5.69 eV respectively. Oxygen vacancies were found on the surface of all titanates. The valance band region was analyzed for Zn3d, Ti3p, O2s and O2p and their hybridization, while the edge (below Fermi level) was determined to be at 2.14 eV, 2.00 eV and 1.99 eV for Zn2TiO4, ZnTiO3 and ZnO/TiO2 respectively.
Open Access
Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride
(Pergamon Press, 1996) Aydınlı, A.; Serpengüzel, A.; Vardar, D.
Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible photoluminescence (PL) and some emit strong PL after annealing. While films grown without NH3 exhibit PL in the deep red, those grown with NH3 show PL in the green. The PL properties of these films with no oxygen (O) content are similar to those of silicon oxide (SiOx) films and porous Si. Using infrared and X-ray Photoelectron Spectroscopy, we suggest that PL from a-SiNx:H films originate from Si clusters which form during PECVD and crystallize upon annealing. We propose that the presence of O is not necessary for efficient PL.