Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films

Date
2006
Advisor
Supervisor
Co-Advisor
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Instructor
Source Title
Materials Science in Semiconductor Processing
Print ISSN
1369-8001
Electronic ISSN
1873-4081
Publisher
Elsevier
Volume
9
Issue
4-5
Pages
848 - 852
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
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Abstract

Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration anneals in vacuum resulted in Ge nanocrystals whereas prolonged anneals at higher temperatures resulted in Ge nanocrystals accompanied with SiGe formation at the SiNx/Si interface. Raman Scattering Spectroscopy was extensively used to track the formation of various phonon modes during the diffusion of Ge through SiNx and into the Si substrate.

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Book Title
Keywords
Ge nanocrystals, Raman scattering spectroscopy, Annealing, Germanium, Phonons, Plasma enhanced chemical vapor deposition, Raman scattering, Ge nanocrystals, Phonon modes, Post-vacuum annealing, Nanostructured materials
Citation
Published Version (Please cite this version)