Structural and loss characterization of SiON layers for optical waveguide applications
Date
2000
Editor(s)
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Source Title
Proceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
Print ISSN
1092-8081
Electronic ISSN
Publisher
IEEE
Volume
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Pages
760 - 761
Language
English
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Abstract
Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm-1 and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.
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Keywords
Annealing , Fourier transform infrared spectroscopy , Hydrogen bonds , Light absorption , Optical films , Optical variables measurement , Plasma enhanced chemical vapor deposition , Refractive index , Silicon compounds , Bending vibrations , Optical loss measurement , Silicon oxynitride film , Stretching vibrations , Optical waveguides