Structural and loss characterization of SiON layers for optical waveguide applications

Date

2000

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Abstract

Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm-1 and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.

Source Title

Proceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000

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IEEE

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Keywords

Annealing, Fourier transform infrared spectroscopy, Hydrogen bonds, Light absorption, Optical films, Optical variables measurement, Plasma enhanced chemical vapor deposition, Refractive index, Silicon compounds, Bending vibrations, Optical loss measurement, Silicon oxynitride film, Stretching vibrations, Optical waveguides

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http://hdl.handle.net/11693/27638

Published Version (Please cite this version)

https://doi.org/10.1109/LEOS.2000.894076

Collections

Scholarly Publications - Physics

Language

English

Type

Conference Paper