Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors

Date

2013

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Source Title

Thin Solid Films

Print ISSN

0040-6090

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Elsevier

Volume

541

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Special issue: Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III

Pages

117 - 120

Language

English

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Abstract

This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. © 2012 Elsevier B.V.

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