Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
Date
2014
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Abstract
Source Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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AVS Science and Technology Society
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Annealing, Atomic layer deposition, Cathodes, Deposition, Gallium alloys, Gallium nitride, Metallic films, Near infrared spectroscopy, Optical band gaps, Pulsed laser deposition, Refractive index, Spectroscopic ellipsometry, Thin films, X ray diffraction, X ray diffraction analysis, Zinc sulfide, Aluminum nitride (AlN), Extinction coefficient (k), Gallium nitrides (GaN), Low deposition temperature, Optical characteristics, Polycrystalline wurtzite, Post deposition annealing, Spectroscopic ellipsometry measurements, Aluminum
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English