Infrared luminescence of annealed germanosilicate layers

Date
2014-03
Advisor
Instructor
Source Title
Journal of Luminescence
Print ISSN
0022-2313
Electronic ISSN
Publisher
Elsevier
Volume
147
Issue
Pages
121 - 126
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

In the light of growing importance of semiconductor nanocrystals for photonics, we report on the growth and characterization of annealed germanosilicate layers used for Ge nanocrystal formation. The films are grown using plasma enhanced chemical vapor deposition (PECVD) and post-annealed in nitrogen at temperatures between 600 and 1200 degrees C for as long as 2 h. Transmission electron microscopy (TEM), Raman scattering and photoluminescence spectroscopy (PL) has been used to characterize the samples both structurally and optically. Formation of Ge precipitates in the germanosilicate layers have been observed using Raman spectroscopy for a variety of PECVD growth parameters, annealing temperatures and times. Ge-Ge mode at similar to 300 cm(-1) is clearly observed at temperatures as low as 700 degrees C for annealing durations for 45 min. Raman results indicate that upon annealing for extended periods of time at temperatures above 900 degrees C; nanocrystals of few tens of nanometers in diameter inside the oxide matrix and precipitation and interdiffusion of Ge, forming SiGe alloy at the silicon and oxide interface take place. Low temperature PL spectroscopy has been used to observe luminescence from these samples in the vicinity of 1550 nm, an important wavelength for telecommunications. Observed luminescence quenches at 140 K. The photoluminescence data displays three peaks closely interrelated at approximately 1490,, 1530 and 1610 nm. PL spectra persist even after removing the oxide layer indicating that the origin of the infrared luminescent centers are not related to the Ge nanocrystals in the oxide layer. (C) 2013 Elsevier B.V. All rights reserved.

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Other identifiers
Book Title
Keywords
Infrared Luminescence, Germanosilicate, Photoluminescence Spectroscopy, Raman Scattering, Annealing
Citation
Published Version (Please cite this version)