Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H

Date
1994
Advisor
Instructor
Source Title
Solid State Communications
Print ISSN
0038-1098
Electronic ISSN
Publisher
Pergamon Press
Volume
90
Issue
2
Pages
77 - 81
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

We have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows that recrystallization begins with the first laser pulse but the multiple pulses are needed to generate the highest hole concentrations of ∼6×1020 cm-3. In boron-doped a-Si:H the electron concentration reaches ∼1×1021 cm-3 after laser anneal which produces a dip rather than a peak near the phonon line as a consequence of a negative Fano-interference parameter, q. The results show that Raman scattering can be used to obtain carrier concentrations in poly-silicon provided that wavelength-dependent Fano interference effects are properly included. © 1994.

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Other identifiers
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Keywords
Amorphous films, Annealing, Charge carriers, Concentration (process), Crystalline materials, Electron transport properties, Laser applications, Laser pulses, Mathematical models, Raman scattering, Recrystallization (metallurgy), Semiconductor doping, Electron concentration, Fano interference effects, Laser annealing, Polycrystalline silicon, Semiconducting silicon
Citation
Published Version (Please cite this version)