Browsing by Subject "Semiconductor materials"

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Open Access
2D anisotropic photonic crystals of hollow semiconductor nanorod with liquid crystals
(2013) Karaomerlioglu F.; Şimsek, Şevket; Mamedov, Amirullah M.; Özbay, Ekmel
Photonic crystals (PCs) have many applications in order to control light-wave propagation. A novel type of two-dimensional anisotropic PC is investigated band gap and optical properties as a hollow semiconductor nanorod with nematicliquid crystals (LC). The PC structure composed of an anisotropic nematicLC in semiconductor square hollow nanorod is designed using the plane wave expansion (PWE) method and finite-difference time-domain (FDTD) method. It has been used 5CB (4-pentyl-4'-cyanobiphenyl) as LC core, and Tellurium (Te) as square hollow nanorod material.The PC with hollow Tenanorod with nematicLC is compared with the PC with solid Tenanorodand the PC with hollow Tenanorod. © (2013) Trans Tech Publications, Switzerland.
Open Access
Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors
(Institute of Physics Publishing, 2017) Bıyıklı, Necmi; Haider A.
In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.
Open Access
Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material
(Wiley-VCH Verlag, 2014) Battal, E.; Bolat, S.; Tanrikulu, M. Y.; Okyay, Ali Kemal; Akin, T.
ZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37 eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as-10.4% K-1 near room temperature with the ZnO thin film grown at 120 °C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 °C grown ZnO has a corner frequency of 2 kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 °C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Open Access
Effective mass enhancement in two-dimensional electron systems: The role of interaction and disorder effects
(Elsevier, 2004) Asgari, R.; Davoudi, B.; Tanatar, Bilal
Recent experiments on two-dimensional (2D) electron systems have found a sharp increase in the effective mass of electrons with decreasing electron density. In an effort to understand this behavior we employ the many-body theory to calculate the quasiparticle effective mass in 2D electron systems. Because the low density regime is explored in the experiments we use the GWγ approximation where the vertex correction γ describes the correlation effects to calculate the self-energy from which the effective mass is obtained. We find that the quasiparticle effective mass shows a sharp increase with decreasing electron density. Disorder effects due to charged impurity scattering plays a crucial role in density dependence of effective mass.
Open Access
Electric breakdown in polycrystalline semiconductors with highly nonlinear I-V characteristics: Simulations for simple barrier height models
(1997) Yildirim H.E.; Tanatar, Bilal; Canessa, E.
An extension of the Canessa and Nguyen binary model for the nonlinear current-voltage (I-V) characteristics of polycrystalline semiconductors, based on the electrical properties of individual grains, is presented. Simple analytical models for the nonuniform distribution of barrier heights at grain boundaries are assumed. The set of nonlinear Kirchhoff equations, that determine the macroscopic current across the specimen, and the nonlinearity coefficient α are solved numerically. The applied voltage dependence of the barrier height models gives α values reaching ≈ 50, indicating high nonlinearity as required by potential commercial applications. © Tübi̇tak.
Open Access
Electrostatic force spectroscopy of near surface localized states
(Institute of Physics Publishing Ltd., 2005) Dâna, A.; Yamamoto, Y.
Electrostatic force microscopy at cryogenic temperatures is used to probe the electrostatic interaction of a conductive atomic force microscopy tip and electronic charges trapped in localized states in an insulating layer on a semiconductor. Measurement of the frequency shift of the cantilever as a function of tip-sample bias voltage shows discrete peaks at certain voltages when the tip is located near trap centres. These discrete changes in frequency are attributed to one by one filling of individual electronic states when the quantized energies traverse the substrate conduction band Fermi energy as the tip-sample voltage is increased. Theoretical analysis of the experiment suggests that such a measurement of the cantilever frequency shift as a function of bias voltage can be interpreted as an AC force measurement, from which spectroscopic information about the location and energy of localized states can be deduced. Experimental results from the study of a sample with InAs quantum dots as trap centres are presented.
Open Access
Elements of nanocrystal high-field carrier transport modeling
(Wiley, 2007) Sevik, Cem; Bulutay, Ceyhun
Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report.
Open Access
ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum
(IEEE, 2004) Bıyıklı, Necmi; Kimukin, I.; Butun, B.; Aytür, O.; Özbay, Ekmel
High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ < 400 nm), near-IR (λ ∼ 850 nm), and IR (λ ∼ 1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.
Open Access
Kilometer-long ordered nanophotonic devices by preform-to-fiber fabrication
(Institute of Electrical and Electronics Engineers, 2006) Bayındır, Mehmet; Abouraddy, A.F.; Shapira O.; Viens J.; Saygin-Hinczewski, D.; Sorin, F.; Arnold, J.; Joannopoulos, J. D.; Fink, Y.
A preform-to-flber approach to the fabrication of functional fiber-based devices by thermal drawing in the viscous state is presented. A macroscopic preform rod containing metallic, semiconducting, and insulating constituents in a variety of geometries and close contact produces kilometer-long novel nanostructured fibers and fiber devices. We first review the material selection criteria and then describe metal-semiconductor-metal photosensitive and thermally sensitive fibers. These flexible, lightweight, and low-cost functional fibers may pave the way for new types of fiber sensors, such as thermal sensing fabrics, artificial skin, and large-area optoelectronic screens. Next, the preform-to-fiber approach is used to fabricate spectrally tunable photodetectors that integrate a photosensitive core and a nanostructured photonic crystal structure containing a resonant cavity. An integrated, self-monitoring optical-transmission waveguide is then described that incorporates optical transport and thermal monitoring. This fiber allows one to predict power-transmission failure, which is of paramount importance if high-power optical transmission fines are to be operated safely and reliably in medical, industrial and defense applications. A hybrid electron-photon fiber consisting of a hollow core (for optical transport by means of a photonic bandgap) and metallic wires (for electron transport) is described that may be used for transporting atoms and molecules by radiation pressure. Finally, a solid microstructured fiber fabricated with a highly nonlinear chalcogenide glass enables the generation of supercontinuum light at near-infrared wavelengths.
Open Access
Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN
(AIP Publishing LLC, 2006) Bütün, S.; Gökkavas, M.; Yu, H.; Özbay, Ekmel
Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96 × 10-10 A/cm2 at 50 V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63 A/W at 50 V bias for 360 nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3 pW was detectable using the devices that were fabricated on the semi-insulating template. © 2006 American Institute of Physics.
Open Access
Low-temperature phase transitions in TlGaS2 layer crystals
(Pergamon Press, 1993) Aydınlı, Atilla; Ellialtioǧlu, R.; Allakhverdiev, K. R.; Ellialtioǧlu, S.; Gasanly, N. M.
Polarized Raman scattering spectra of TlGaS2 layer crystals have been studied for the first time as a function of temperature between 8.5 and 295 K. No evidence for a soft mode behaviour has been found. The anomalies observed in the temperature dependence of low- and high-frequency phonon modes at ∼ 250 and ∼ 180 K, respectively, are explained as due to the phase transitions. It is supposed that the phase transitions are caused by the deformation of structural complexes GaS4, rather than by slippage of Tl atom channels in [110] and [110] directions, which is mainly responsible for the appearance of the low-temperature ferroelectric phase transitions in other representatives of TlBX2 layer compounds. © 1993.
Open Access
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal
(Elsevier Science Publishers B.V., Amsterdam, Netherlands, 2000) Gasanly, N. M.; Serpengüzel, A.; Aydınlı, A.; Baten, S. M. A.
The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature. 0.2-15.2 W cm-2 excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. Analysis of the data indicates that the PL band is due to donor-acceptor recombination. A shallow acceptor level and a moderately deep donor level are, respectively, introduced at 0.012 eV above the top of the valence band and at 0.317 eV below the bottom of the conduction band. An energy-level diagram for radiative donor-acceptor pair recombination in TlGaSe2 layered single crystals is proposed.
Open Access
Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors
(A I P Publishing LLC, 2007) Zebarjadi, M.; Bulutay, C.; Esfarjani, K.; Shakouri, A.
An algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed, and memory storage; therefore it is ideal for the three-dimensional device simulators. The authors show that even in moderately high applied fields, one can obtain the correct electronic distribution. They give the correct definition for electronic temperature and show that in high applied fields, the quasi-Fermi level and electronic temperature become valley dependent. The effect of including Pauli exclusion principle on the band profile, electronic temperature, and quasi-Fermi level for the inhomogeneous case of a single barrier heterostructure is illustrated.
Open Access
Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC
(TÜBİTAK, 2006) Bulutay, Ceyhun
The k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a detailed formulation is provided where the associated k · p parameters are extracted from the local empirical pseudopotential method in the form of band edge energies and generalized momentum matrix elements. We demonstrate the systematic improvement of the technique with the proper choice of the band edge states for the group-IV indirect bandgap semiconductors: Si, Ge, diamond and SiC of the 30 cubic phase. The full zone agreement is observed to span an energy window of more than 20 eV for Si, and 40 eV for the diamond with the 15-band pseudopotential-based k · p approach. © TÜBİTAK.
Open Access
Radiative donor-acceptor pair recombination in TlInS2 single crystals
(Institute of Physics Publishing, 1999) Aydınlı, A.; Gasanly, N. M.; Yılmaz, I.; Serpengüzel, A.
Photoluminescence (PL) spectra of TlInS2 layered single crystals were investigated in the 500-860 nm wavelength region and in the 11.5-100 K temperature range. We observed two PL bands centred at 515 nm (2.41 eV, A band) and 816 nm (1.52 eV, B band) at T = 11.5 K and an excitation intensity of 7.24 W cm-2. A detailed study of the A band was carried out as a function of temperature and excitation laser intensity. A red shift of the A band position was observed for both increasing temperature and decreasing excitation laser intensity in the range from 0.12 to 7.24 W cm-2. Analysis of the data indicates that the A band is due to radiative transitions from the moderately deep donor level located at 0.25 eV below the bottom of the conduction band to the shallow acceptor level located at 0.02 eV above the top of the valence band. An energy-level diagram for radiative donor-acceptor pair transitions in TlInS2 layered single crystals is proposed.
Open Access
Spin correlations in a quasi-one-dimensional electron gas
(Elsevier BV, 1996) Tanatar, Bilal
We study the spin correlations in a quasi-one-dimensional electron gas within the self-consistent-field approximation (SCFA). Electrons confined in a parabolic potential restricted to have free motion in one space dimension, and interact via a Coulomb-type potential are assumed to model quantum wires as realized in semiconductor structures. Density and spin-density response of the interacting electron system is investigated where correlation effects beyond the random-phase approximation (RPA) are embodied in the local-field factors. We calculate the spin-dependent pair-correlation functions and effective potentials, and determine the paramagnon dispersion. We find that electron correlation effects signal a paramagnetic instability for rs > 1.5.
Open Access
Theory of the Pseudospin resonance in semiconductor bilayers
(The American Physical Society, 2007) Abedinpour, S. H.; Polini, M.; MacDonald, A. H.; Tanatar, Bilal; Tosi, M. P.; Vignale, G.
The pseudospin degree of freedom in a semiconductor bilayer gives rise to a collective mode analogous to the ferromagnetic-resonance mode of a ferromagnet. We present a many-body theory of the dependence of the energy and the damping of this mode on layer separation d. Based on these results, we discuss the possibilities of realizing transport-current driven pseudospin-transfer oscillators in semiconductors, and of using the pseudospin-transfer effect as an experimental probe of intersubband plasmons.
Open Access
Thermomagnetic effects of nondegenerate Kane semiconductors under the conditions of mutual electron-phonon drag in high electric and arbitrary magnetic fields
(2005) Babaev, M.M.; Gassym, T.M.; Tas, M.; Tomak, M.
The thermopower and Nernst-Ettingshausen (NE) effect of nondegenerate Kane semiconductors are investigated by taking into account the electron and phonon heating and their arbitrary mutual drag. The electron spectrum is taken in the Kane two-band form. The electric and magnetic field dependences of the electronic and phonon parts of the thermoelectric and NE coefficients and voltages are obtained in analytical forms. It is shown that the mutual drag of electrons and phonons and degree of nonparabolicity of the electron spectrum strongly influence the thermoelectric and thermomagnetic properties of semiconductors under high electric and magnetic fields. © IOP Publishing Ltd.
Open Access
Towards multimaterial multifunctional fibres that see, hear, sense and communicate
(Nature Publishing Group, 2007) Abouraddy, A. F.; Bayındır, Mehmet; Benoit, G.; Hart, S. D.; Kuriki, K.; Orf, N.; Shapira, O.; Sorin, F.; Temelkuran, B.; Fink, Y.
Virtually all electronic and optoelectronic devices necessitate a challenging assembly of conducting, semiconducting and insulating materials into specific geometries with low-scattering interfaces and microscopic feature dimensions. A variety of wafer-based processing approaches have been developed to address these requirements, which although successful are at the same time inherently restricted by the wafer size, its planar geometry and the complexity associated with sequential high-precision processing steps. In contrast, optical-fibre drawing from a macroscopic preformed rod is simpler and yields extended lengths of uniform fibres. Recently, a new family of fibres composed of conductors, semiconductors and insulators has emerged. These fibres share the basic device attributes of their traditional electronic and optoelectronic counterparts, yet are fabricated using conventional preform-based fibre-processing methods, yielding kilometres of functional fibre devices. Two complementary approaches towards realizing sophisticated functions are explored: on the single-fibre level, the integration of a multiplicity of functional components into one fibre, and on the multiple-fibre level, the assembly of large-scale two- and three-dimensional geometric constructs made of many fibres. When applied together these two approaches pave the way to multifunctional fabric systems. © 2007 Nature Publishing Group.
Open Access
XPS characterization of Au (core)/SiO2 (shell) nanoparticles
(American Chemical Society, 2005) Tunc, I.; Süzer, Şefik; Correa-Duarte, M. A.; Liz-Marzán, L. M.
Core-shell nanoparticles with ca. 15-nm gold core and 6-nm silica shell were prepared and characterized by XPS. The Au/Si atomic ratio determined by XPS is independent of the electron takeoff angle because of the concentric spherical shape of the nanoparticles. The formula given by Wertheim and DiCenzo (Phys. Rev. B 1988, 37, 844) for spherical nanoparticles and the modified one by Yang et al. (J. Appl. Phys. 2005, 97, 024303) for core-shell nanoparticles are used to correlate the XPS-derived composition with the geometry of the nanoparticles only after significantly modifying either the bulk density of the silica shell or the attenuation length of the photoelectrons. © 2005 American Chemical Society.