Elements of nanocrystal high-field carrier transport modeling
Date
2007
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Abstract
Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report.
Source Title
Physica Status Solidi (C): Current Topics in Solid State Physics
Publisher
Wiley
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Ab initio band structures, Auger processes, Fermi's golden rule, High-field transport, Pseudo potentials, Semiconductor nanocrystals, Solar-cell applications, Transport modelling, Transport simulations, Civil aviation, Direct energy conversion, Nanocrystalline alloys, Nanocrystals, Nanostructured materials, Nanostructures, Nanotechnology, Semiconductor materials, Solar energy, Impact ionization
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English