Elements of nanocrystal high-field carrier transport modeling
Date
2007
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Source Title
Physica Status Solidi (C): Current Topics in Solid State Physics
Print ISSN
1862-6351
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Publisher
Wiley
Volume
4
Issue
2
Pages
635 - 637
Language
English
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Abstract
Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report.
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Ab initio band structures , Auger processes , Fermi's golden rule , High-field transport , Pseudo potentials , Semiconductor nanocrystals , Solar-cell applications , Transport modelling , Transport simulations , Civil aviation , Direct energy conversion , Nanocrystalline alloys , Nanocrystals , Nanostructured materials , Nanostructures , Nanotechnology , Semiconductor materials , Solar energy , Impact ionization