Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors
Date
2007
Authors
Zebarjadi, M.
Bulutay, C.
Esfarjani, K.
Shakouri, A.
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1520-8842
Publisher
A I P Publishing LLC
Volume
90
Issue
9
Pages
092111-1 - 092111-3
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
An algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed, and memory storage; therefore it is ideal for the three-dimensional device simulators. The authors show that even in moderately high applied fields, one can obtain the correct electronic distribution. They give the correct definition for electronic temperature and show that in high applied fields, the quasi-Fermi level and electronic temperature become valley dependent. The effect of including Pauli exclusion principle on the band profile, electronic temperature, and quasi-Fermi level for the inhomogeneous case of a single barrier heterostructure is illustrated.