Low-temperature phase transitions in TlGaS2 layer crystals
Date
1993
Editor(s)
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Source Title
Solid State Communications
Print ISSN
0038-1098
Electronic ISSN
Publisher
Pergamon Press
Volume
88
Issue
5
Pages
387 - 390
Language
English
Type
Journal Title
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Abstract
Polarized Raman scattering spectra of TlGaS2 layer crystals have been studied for the first time as a function of temperature between 8.5 and 295 K. No evidence for a soft mode behaviour has been found. The anomalies observed in the temperature dependence of low- and high-frequency phonon modes at ∼ 250 and ∼ 180 K, respectively, are explained as due to the phase transitions. It is supposed that the phase transitions are caused by the deformation of structural complexes GaS4, rather than by slippage of Tl atom channels in [110] and [110] directions, which is mainly responsible for the appearance of the low-temperature ferroelectric phase transitions in other representatives of TlBX2 layer compounds. © 1993.
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Keywords
Crystal defects , Crystal symmetry , Crystals , Ferroelectricity , Low temperature effects , Phase transitions , Phonons , Raman scattering , Semiconductor materials , Spectrum analysis , Low temperature phase transitions , Soft mode behaviour , Structural complexes deformation , Thallium gallium sulfides , Thallium compounds