ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum
Date
2004
Authors
Bıyıklı, Necmi
Kimukin, I.
Butun, B.
Aytür, O.
Özbay, Ekmel
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
IEEE Journal on Selected Topics in Quantum Electronics
Print ISSN
1077-260X
Electronic ISSN
Publisher
IEEE
Volume
10
Issue
4
Pages
759 - 765
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Citation Stats
Attention Stats
Series
Abstract
High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ < 400 nm), near-IR (λ ∼ 850 nm), and IR (λ ∼ 1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.
Course
Other identifiers
Book Title
Keywords
Heterostructure, High performance, III-V alloys, Indium-tin-oxide (ITO), Photodiode, Resonant cavity, Schottky, Bandwidth, Carrier communication, Electric conductivity, Electric currents, Fabrication, Heterojunctions, Indium compounds, Infrared spectrographs, Photodetectors, Schottky barrier diodes, Semiconductor materials, Spectrum analysis, Ultraviolet detectors, High performance, III-V alloys, Indium-tin-oxide (ITO), Resonant cavity, Photodiodes